[17p-E206-1~7] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[17p-E206-7] Material Structure of Silicon-Carbon Alloy Fabricated by C Hot Ion Implantation Technique(Ⅰ)

〇Yusuke Omata¹, Takashi Aoki¹, Toshiyuki Sameshima², Tomohisa Mizuno¹ (1.Kanagawa Univ., 2.Tokyo Univ Agri. Tech.)

Keywords:quantum confinement effects, photonics, ion implantation

Cホットイオン注入法を用いたSi_1-yC_y層の構造の詳細について報告する.