[17p-P3-1~22] 15.4 III-V-group nitride crystals

[17p-P3-12] The control of hetero-interface of AlN/SiC by sublimation growth

〇Satoshi Ito¹, Daichi Dojima¹, Koji Ashida¹, Issei Satoh², Yoshiyuki Yamamoto², Tadaaki Kaneko¹ (1.Kwansei Gakuin Univ., 2.Transmission Devices Lab., Sumitomo Electric)

Keywords:aluminum nitride, sublimation proximity method, Silicon Carbide