[17p-P3-1~22] 15.4 III-V-group nitride crystals

[17p-P3-13] Improvement of Crystal Quality of AlN on 4 inch c-palne Sapphire Substrate by High Temperature Annealing in Nitrogen Atmosphere

〇Yuji Tomita¹, Akira Mishima¹, Yoshiki Yano¹, Toshiya Tabuchi¹, Koh Matsumoto¹, Hideto Miyake² (1.Taiyo Nippon Sanso Corp., 2.Mie Univ.)

Keywords:aluminum nitride, annealing

We performed high temperature annealing in nitrogen atmosphere to AlN on 4-inch c-plane sapphire substrate.Change of the AlN surface morphology before and after annealing was compared by the optical microscope image and crystaline quality was compared by X-ray Rocking Curve.Result of annealing, it was not observed significant difference of the AlN surface morphology before and after annealing.The X-ray rocking curve-full width half-maximum of the AlN (0002) plane and (10-12) plane were decreased in full wafer after annealing.