Yusei Kawasaki

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Speaker, Author, Co-Author

Wed. Sep 19, 2018 1:15 PM - 7:15 PM 146 (Reception Hall)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[19p-146-1~22] 15.4 III-V-group nitride crystals

5:15 PM - 5:30 PM

[19p-146-15] Fabrication of high aspect GaN structures by hydrogen atmosphere anisotropic thermal etching(HEATE) method with addition of ammonia gas.

〇Yusei Kawasaki¹, Akihiro Matsuoka¹, Yusuke Namae¹, Yuki Ooe¹, Daichi Ito¹, Yuta Moriya¹, Akihiko Kikuchi^1,2 (1.Sophia Univ., 2.Sophia Nanotechnology)

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