kentarou matsuura

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Speaker, Author, Co-Author

Wed. Sep 19, 2018 1:30 PM - 5:50 PM 233 (233)

Symposium (Oral)
| Symposium
| Create a path of future semiconductor devices by new materials and processes

[19p-233-1~12] Create a path of future semiconductor devices by new materials and processes

3:20 PM - 3:35 PM

[19p-233-6] Sputter-Deposited-MoS₂ nMISFETs with Top-Gate for Large Area Integration

〇(D)kentarou matsuura¹, Jun'ichi Shimizu¹, Mayato Toyama¹, Takumi Ohashi¹, Iriya Muneta¹, Seiya Ishihara², Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Atsushi Ogura², Hitoshi Wakabayashi¹ (1.Tokyotech, 2.Meiji Univ.)