3:20 PM - 3:35 PM
[19p-233-6] Sputter-Deposited-MoS2 nMISFETs with Top-Gate for Large Area Integration
Keywords:molybdenum disulfide, sputtering method, nMISFETs
Symposium (Oral)
Symposium » Create a path of future semiconductor devices by new materials and processes
Wed. Sep 19, 2018 1:30 PM - 5:50 PM 233 (233)
Akio Ohta(Nagoya Univ.), Noriyuki Taoka(AIST)
3:20 PM - 3:35 PM
Keywords:molybdenum disulfide, sputtering method, nMISFETs