1:30 PM - 3:30 PM
△ [19p-PB1-28] Study on Artificial synaptic device using resistance change memory with Hf Oxide film
〇(M2)Atsushi Azuma1, Ryo Nakajima1, Tomohiro Shimizu1, Takeshi Ito1, Shoso Shingubara1 (1.Kansai Univ.)
Wed. Sep 19, 2018 1:30 PM - 3:30 PM PB (Shirotori Hall)
1:30 PM - 3:30 PM
〇(M2)Atsushi Azuma1, Ryo Nakajima1, Tomohiro Shimizu1, Takeshi Ito1, Shoso Shingubara1 (1.Kansai Univ.)