Efi Dwi Indari

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Speaker, Author, Co-Author

Fri. Sep 21, 2018 1:00 PM - 5:15 PM 135 (135)

Oral presentation
| 13 Semiconductors
| 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[21p-135-1~16] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

2:45 PM - 3:00 PM

▼ [21p-135-8] Effect of Conduction Band Offset on Breakdown Voltage at SiO₂/4H-SiC (000-1) studied by Hard X-ray Photoelectron Spectroscopy

〇(D)Efi Dwi Indari^1,2, Yoshiyuki Yamashita^1,2, Takahiro Nagata¹, Shigenori Ueda^1,3, Ryu Hasunuma⁴, Kikuo Yamabe⁴ (1.NIMS, 2.Kyushu Univ, 3.SPring-8, 4.Univ of Tsukuba)

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