[21p-135-1~16] 13.1 Si系基礎物性・表面界面・シミュレーション

▼ [21p-135-8] Effect of Conduction Band Offset on Breakdown Voltage at SiO₂/4H-SiC (000-1) studied by Hard X-ray Photoelectron Spectroscopy

〇(D)Efi Dwi Indari^1,2、Yoshiyuki Yamashita^1,2、Takahiro Nagata¹、Shigenori Ueda^1,3、Ryu Hasunuma⁴、Kikuo Yamabe⁴ (1.NIMS、2.Kyushu Univ、3.SPring-8、4.Univ of Tsukuba)

キーワード：breakdown voltage, conduction band offset, SiO2/4H-SiC (000-1)

We investigated the effect of conduction band offset (ΔE_c) on the breakdown voltage upon SiO₂/4H-SiC (000-structures by means of hard x-ray photoelectron spectroscopy. For electrical measurement of metal/SiO₂/4H-SiC (000-1) structures, the breakdown voltage increases with larger ΔE_c. SiO₂ prepared by dry oxidation procedure exhibits largest ΔE_c, while wet oxidation procedure exhibits smallest ΔE_c. Oxygen annealing performed after wet oxidation was effective for an increase of ΔE_c, yields higher breakdown voltage. Consequently, larger ΔE_c results in lower leakage current.