Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[21p-135-1~16] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Fri. Sep 21, 2018 1:00 PM - 5:15 PM 135 (135)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[21p-135-1] Evaluation of reliability using the dielectric polarization characteristic in Pulse Photoconductive Measurement

〇Shotaro Kuzukawa¹, Hiroki Matsuyama¹, Narumi Abe¹, Yuki Kumagae¹, Yuichiro Shimazu¹, Kotaro Nagatomo², Shunsuke Nakamura², Yusuke Nakayama², Kazuhiro Kobayashi¹, Hiroshi Kubota¹, Takeshi Hashishin¹, Masao Yoshioka² (1.GSST Kumamoto Univ., 2.Faculty of Technology Kumamoto Univ.)

1:15 PM - 1:30 PM

[21p-135-2] Development of Non-Destructive Surface States Density Measurement by Pulse Photoconductivity Method

〇Hiroki Matsuyama¹, Shotaro Kuzukawa¹, Narumi Abe¹, Yuki Kumagae¹, Yusuke Nakayama², Shunsuke Nakamura², Kotaro Nagatomo², Kazuhiro Kobayashi¹, Hiroshi Kubota¹, Takeshi Hashishin¹, Masao Yoshioka² (1.Graduate school of science and technology Kumamoto Univ., 2.Kumamoto Univ.)

1:30 PM - 1:45 PM

△ [21p-135-3] Multi-level 2-bit/cell operation utilizing Hf-based MONOS device

〇(P)Sohya Kudoh¹, Shin Ishimatsu¹, Yusuke Horiuchi¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech.)

1:45 PM - 2:00 PM

[21p-135-4] Substrate orientation dependence of Si surface atomically-flattening by annealing in Ar/H₂ ambient

〇Yusuke Horiuchi¹, Sohya Kudoh¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

2:00 PM - 2:15 PM

▲ [21p-135-5] Oxidation delay at the edge of 3-dimensional (3D) nano-structured silicon

〇ShuJun YE¹, Tetsuo Endoh¹ (1.Tohoku University)

2:15 PM - 2:30 PM

▼ [21p-135-6] Pole figures as tools for understanding film misorientation in Group IV thin films fabricated by aluminum-induced crystallization

〇(PC)Mel Hainey¹, Yoann Robin², Hiroshi Amano², Noritaka Usami¹ (1.Grad. Sch. Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

2:30 PM - 2:45 PM

[21p-135-7] Influence of hole lifetime of n-SiC epitaxial layer on pn diode characteristics

〇(M1)Kyomin Sasaki¹, Takuya Hoshii¹, Iriya Muneta¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹, Kuniyuki Kakushima¹ (1.Tokyo Tech)

2:45 PM - 3:00 PM

▼ [21p-135-8] Effect of Conduction Band Offset on Breakdown Voltage at SiO₂/4H-SiC (000-1) studied by Hard X-ray Photoelectron Spectroscopy

〇(D)Efi Dwi Indari^1,2, Yoshiyuki Yamashita^1,2, Takahiro Nagata¹, Shigenori Ueda^1,3, Ryu Hasunuma⁴, Kikuo Yamabe⁴ (1.NIMS, 2.Kyushu Univ, 3.SPring-8, 4.Univ of Tsukuba)

3:15 PM - 3:30 PM

[21p-135-9] Temperature Influence on Adsorption and Desorption of Organic Molecules on Silicon
Surface

〇Kenta Hori¹, Zhou Yifan¹, Hitoshi Habuka¹ (1.Yokohama Nat. Univ.)

3:30 PM - 3:45 PM

△ [21p-135-10] Fundamental Study on Graphene-Assisted Chemical Etching of Ge Surface
- Temperature Dependence of Etching Rate and Evaluation of Activation Energy -

〇Tomoki Hirano¹, Yuki Nakata¹, Hiroto Yamashita¹, Shaoxian Li¹, Kentaro Kawai¹, Kazuya Yamamura¹, Kenta Arima¹ (1.Osaka Univ.)

3:45 PM - 4:00 PM

▲ [21p-135-11] Lateral etching of HfN_0.5 narrow line utilizing diluted HF solution

〇(M1)Yizhe Ding¹, Rengie Mark D Mailig¹, Sohya Kudoh¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

4:00 PM - 4:15 PM

[21p-135-12] Development of Alkaline Solution generated by Electrolysis of Organic Ammonium Salt for Wet and Cleaning Process in Semiconductor Manufacturing
-Elucidation of hypochlorite ion decomposition reaction mechanism by organic cation species-

〇Takahiro Kanai¹, Yuuji Nagashima¹, Hideaki Hirabayashi², Masaaki Hirakawa³ (1.Shibaura mechatronics Corp., 2.Toshiba Materials Co.,Ltd., 3.Toshiba Corp.)

4:15 PM - 4:30 PM

[21p-135-13] Visualization of real contact area of PVA brush using total reflected light

〇(M2)Masanao Hanai¹, Toshiyuki Sanada¹, Hirokuni Hiyama², Akira Fukunaga² (1.Shizuoka Univ., 2.Ebara Corp.)

4:30 PM - 4:45 PM

[21p-135-14] Analysis of adhesion behavior of a silica abrasive grain to silicon oxide film by molecular dynamics simulations

〇Koichi Masuya¹, Masashi Obuchi¹, Satomi Hamada¹, Masuhiro Mikami², Chikako Takatoh¹ (1.Ebara Corp., 2.Keio Univ.)

4:45 PM - 5:00 PM

[21p-135-15] On visualization of water flow of cutting part of dicing

〇(M2)Daisuke Ushijima¹, Kai Haruki¹, Kubota Hiroshi¹, Hashishin Takeshi¹, Yoshioka Masao¹ (1.Kumamoto Univ.)

5:00 PM - 5:15 PM

[21p-135-16] Water Flow Recirculation Design in Batch-Type Silicon Wafer Wet Cleaner

〇Miya Matsuo¹, Kento Miyazaki¹, Shogo Okuyama¹, Hitoshi Habuka¹, Akihiro Goto² (1.Yokohama Nat. Univ., 2.Pre-Tech)

Session information

[21p-135-1~16] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[21p-135-1] Evaluation of reliability using the dielectric polarization characteristic in Pulse Photoconductive Measurement

[21p-135-2] Development of Non-Destructive Surface States Density Measurement by Pulse Photoconductivity Method

△ [21p-135-3] Multi-level 2-bit/cell operation utilizing Hf-based MONOS device

[21p-135-4] Substrate orientation dependence of Si surface atomically-flattening by annealing in Ar/H₂ ambient

▲ [21p-135-5] Oxidation delay at the edge of 3-dimensional (3D) nano-structured silicon

▼ [21p-135-6] Pole figures as tools for understanding film misorientation in Group IV thin films fabricated by aluminum-induced crystallization

[21p-135-7] Influence of hole lifetime of n-SiC epitaxial layer on pn diode characteristics

▼ [21p-135-8] Effect of Conduction Band Offset on Breakdown Voltage at SiO₂/4H-SiC (000-1) studied by Hard X-ray Photoelectron Spectroscopy

[21p-135-9] Temperature Influence on Adsorption and Desorption of Organic Molecules on Silicon
Surface

△ [21p-135-10] Fundamental Study on Graphene-Assisted Chemical Etching of Ge Surface
- Temperature Dependence of Etching Rate and Evaluation of Activation Energy -

▲ [21p-135-11] Lateral etching of HfN_0.5 narrow line utilizing diluted HF solution

[21p-135-12] Development of Alkaline Solution generated by Electrolysis of Organic Ammonium Salt for Wet and Cleaning Process in Semiconductor Manufacturing
-Elucidation of hypochlorite ion decomposition reaction mechanism by organic cation species-

[21p-135-13] Visualization of real contact area of PVA brush using total reflected light

[21p-135-14] Analysis of adhesion behavior of a silica abrasive grain to silicon oxide film by molecular dynamics simulations

[21p-135-15] On visualization of water flow of cutting part of dicing

[21p-135-16] Water Flow Recirculation Design in Batch-Type Silicon Wafer Wet Cleaner

Authentication

Session information

[21p-135-1~16] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [21p-135-3] Multi-level 2-bit/cell operation utilizing Hf-based MONOS device

▲ [21p-135-5] Oxidation delay at the edge of 3-dimensional (3D) nano-structured silicon

▼ [21p-135-6] Pole figures as tools for understanding film misorientation in Group IV thin films fabricated by aluminum-induced crystallization

▼ [21p-135-8] Effect of Conduction Band Offset on Breakdown Voltage at SiO2/4H-SiC (000-1) studied by Hard X-ray Photoelectron Spectroscopy

△ [21p-135-10] Fundamental Study on Graphene-Assisted Chemical Etching of Ge Surface- Temperature Dependence of Etching Rate and Evaluation of Activation Energy -

▲ [21p-135-11] Lateral etching of HfN0.5 narrow line utilizing diluted HF solution

Authentication

▼ [21p-135-8] Effect of Conduction Band Offset on Breakdown Voltage at SiO₂/4H-SiC (000-1) studied by Hard X-ray Photoelectron Spectroscopy

△ [21p-135-10] Fundamental Study on Graphene-Assisted Chemical Etching of Ge Surface
- Temperature Dependence of Etching Rate and Evaluation of Activation Energy -

▲ [21p-135-11] Lateral etching of HfN_0.5 narrow line utilizing diluted HF solution