[19a-431B-1~6] 3.5 Laser system and materials

Wed. Sep 19, 2018 9:00 AM - 10:30 AM 431B (431-2)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[19a-431B-1] Output characteristics of zero-phonon-line pumped Yb:YAG TRAM laser

〇Seiji Taniguchi¹, Haik Chosrowjan¹, Dazhi Li¹, Shinji Motokoshi¹, Masayuki Fujita¹, Yasukazu Izawa¹, Shingo Nishikata², Tomoya Morioka², Koichi Hamamoto², Hiroshi Ikebuchi², Yuichi Ohtani², Takeshi Kaneko², Hiroyuki Daigo² (1.ILT, 2.MHI)

9:15 AM - 9:30 AM

[19a-431B-2] Higher output power of the laser which keep the beam in single longitudinal and transverse mode oscillation

〇SEIYA KUMAMOTO¹, Chiaki Ohae¹, Yusuke Furukawa¹, Masayuki Katsuragawa¹ (1.UEC)

9:30 AM - 9:45 AM

[19a-431B-3] Microchip Laser Using Output Coupler with Photonic Crystal Structure

〇JUN SUZUKI¹, MUNEYUKI ADACHI¹, SHUNGO ARAKI¹, NAOKI YOSHIDA¹, KAZUNOBU KOJIMA¹, MASAAKI HANEBUCHI¹ (1.NIDEK CO., LTD.)

9:45 AM - 10:00 AM

△ [19a-431B-4] In-band pumped Tm:Lu₂O₃ laser by Raman fiber laser at the wavelength of 1629 nm

〇(M1)Anna Suzuki^1,2, Masaki Tokurakawa^1,2 (1.UEC, 2.ILS)

10:00 AM - 10:15 AM

△ [19a-431B-5] A continuous wave diode-pumped Er:YAP laser at 2.92 μm

〇Hiroki Kawase¹, Ryo Yasuhara^1,2 (1.SOKENDAI, 2.NINS, NIFS)

10:15 AM - 10:30 AM

[19a-431B-6] DUV Laser Platform for Semiconductor Inspection

〇Kentaro Miyata¹, Akihiro Tanabashi¹, Mizuki Mohara², Kei Shimura², Shinichi Nakayama³, Satoshi Wada¹ (1.RIKEN, 2.Hitachi High-Tech., 3.Megaopto)

Session information

[19a-431B-1~6] 3.5 Laser system and materials

[19a-431B-1] Output characteristics of zero-phonon-line pumped Yb:YAG TRAM laser

[19a-431B-2] Higher output power of the laser which keep the beam in single longitudinal and transverse mode oscillation

[19a-431B-3] Microchip Laser Using Output Coupler with Photonic Crystal Structure

△ [19a-431B-4] In-band pumped Tm:Lu₂O₃ laser by Raman fiber laser at the wavelength of 1629 nm

△ [19a-431B-5] A continuous wave diode-pumped Er:YAP laser at 2.92 μm

[19a-431B-6] DUV Laser Platform for Semiconductor Inspection

Authentication

Session information

[19a-431B-1~6] 3.5 Laser system and materials

[19a-431B-1] Output characteristics of zero-phonon-line pumped Yb:YAG TRAM laser

[19a-431B-2] Higher output power of the laser which keep the beam in single longitudinal and transverse mode oscillation

[19a-431B-3] Microchip Laser Using Output Coupler with Photonic Crystal Structure

△ [19a-431B-4] In-band pumped Tm:Lu2O3 laser by Raman fiber laser at the wavelength of 1629 nm

△ [19a-431B-5] A continuous wave diode-pumped Er:YAP laser at 2.92 μm

[19a-431B-6] DUV Laser Platform for Semiconductor Inspection

Authentication

△ [19a-431B-4] In-band pumped Tm:Lu₂O₃ laser by Raman fiber laser at the wavelength of 1629 nm