Oral presentation

16 Amorphous and Microcrystalline Materials » 16.3 Bulk, thin-film and other silicon-based solar cells

[20p-133-1~14] 16.3 Bulk, thin-film and other silicon-based solar cells

Thu. Sep 20, 2018 1:45 PM - 5:45 PM 133 (133+134)

Nobuyuki Matsuki(Kanagawa Univ.), Kazuhiro Goto(Nagoya Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:45 PM - 2:00 PM

[20p-133-1] Evaluation and analysis of spatial distribution of IQE of PERC

〇Toshimitsu Mochizuki¹, Supawan Joonwichien¹, Katsuto Tanahashi¹, Katsuhiko Shirasawa¹, Isao Sakata¹, Hidetaka Takato¹ (1.AIST)

2:00 PM - 2:15 PM

△ [20p-133-2] Analysis of quantum efficiency in bifacial interdigitated-back-contact (IBC) crystalline silicon solar cell

〇Tomihisa Tachibana¹, Mochizuki Toshimitsu¹, Shirasawa Katsuhiko¹, Takato Hidetaka¹ (1.AIST)

2:15 PM - 2:30 PM

[20p-133-3] Fully ion implanted interdigitated back contact silicon solar cell with gap structure between emitter and BSF via a self-aligned process

Tanahashi Katsuto¹, Tachibana Tomihisa¹, Moriya Masaaki¹, Kida Yasuhiro¹, Utsunomiya Satoru¹, Shirasawa Katsuhiko¹, 〇Hidetaka Takato¹ (1.AIST)

2:30 PM - 2:45 PM

[20p-133-4] Formation of counter-doped n-a-Si films with good passivation quality by plasma ion implantation

〇(P)Tu ThiCam Huynh¹, Noboru Yamaguchi², Hideo Suzuki², Keisuke Ohdaira¹, Hideki Matsumura¹ (1.JAIST, 2.ULVAC)

3:00 PM - 3:15 PM

▲ [20p-133-5] Controlling Solution Surface Tension for the Cleaning of Small Size Textured Si Surface to Obtain Extremely Low Surface Recombination Velocity of 0.6 cm/s

〇(PC)Cong Thanh Nguyen¹, Keisuke Ohdaira¹, Hideki Matsumura¹ (1.Japan Advanced Institute of Science and Technology (JAIST))

3:15 PM - 3:30 PM

[20p-133-6] Effect of the microstructure of interfacial i-layers on the photovoltaic performance
in a-Si:H/c-Si heterojunction solar cells

〇Hitoshi Sai¹, Chen Po-Wei^1,2, Hsu Hung-Jung¹, Matsui Takuya¹, Shota Nunomura¹, Matsubara Koji¹ (1.AIST, 2.Natl. Chiao Tung U.)

3:30 PM - 3:45 PM

[20p-133-7] Analysis of void structures near a-Si:H/c-Si heterointerfaces: Effect of doping on positron annihilation in a-Si:H

〇Nobuyuki Matsuki¹, Takuya Matsui², Koji Michishio², Brian O'Rourke², Nagayasu Oshima², Akira Uedono³ (1.Kanagawa Univ., 2.AIST, 3.Univ. Tsukuba)

3:45 PM - 4:00 PM

[20p-133-8] Passivation Quality of a-Si_1-xO_x:H Thin Film

〇Kimihiko Saito¹, Makoto Konagai² (1.Fukushima Univ., 2.Tokyo City Univ.)

4:15 PM - 4:30 PM

[20p-133-9] Influence of illumination during ITO sputtering on passivation performance at a-Si:H/c-Si interface

〇Masanori Senma¹, Kazuhiro Gotoh¹, Yasuyoshi Kurokawa¹, Noritaka Usami¹ (1.Nagoya Univ.)

4:30 PM - 4:45 PM

△ [20p-133-10] Evaluation of ITO/a-Si interface chemical bonding states fabricated by reactive plasma deposition using hard X-ray photoemission spectroscopy

〇Tappei Nishihara¹, Takuto Kojima¹, Kanai Hiroki¹, Matsumura Hideki², Kamioka Takefumi¹, Ohshita Yoshio³, Yasuno Satoshi⁴, Hirosawa Ichiro⁴, Atsushi Ogura¹ (1.Meiji Univ., 2.JAIST, 3.Toyota Tech Inst., 4.JASRI)

4:45 PM - 5:00 PM

△ [20p-133-11] Local Structure of TiO_x/SiO_x/c-Si Heterointerface with Superior Passivation Performance Revealed by Electron Energy Loss Spectroscopy

〇Takeya Mochizuki¹, Kazuhiro Gotoh¹, Yasuyoshi Kurokawa¹, Takahisa Yamamoto¹, Noritaka Usami¹ (1.Graduate School of Eng., Nagoya Univ.)

5:00 PM - 5:15 PM

▼ [20p-133-12] Photovoltaic performance of PEDOT:PSS/c-Si junction solar cells by adding ferroelectric polymer thin-layer

〇(D)ATM Saiful Islam¹, R. Ishikawa¹, K. Ueno¹, H. Shirai¹, K. Omote², K. Yokoo² (1.Saitama University, 2.Ideal Star Inc.)

5:15 PM - 5:30 PM

[20p-133-13] Silicon heterojunction solar cells with a sputtered p-type emitter structure

〇Jinwoo Kim¹, Yuta Shiratori¹, Kazuyoshi Nakada¹, Shinsuke Miyajima¹ (1.Tokyo Tech)

5:30 PM - 5:45 PM

[20p-133-14] Low Damage Deposition of Tungsten Oxide as Hole Transport Layer for Silicon Heterojunction Solar Cell

〇Yuta Shiratori¹, Yoji Yasuda², Yoichi Hoshi², Jinwoo Kim¹, Kazuyoshi Nakada¹, Shinsuke Miyajima¹ (1.Tokyo Tech., 2.Tokyo Polytechnic Univ.)

Session information

[20p-133-1~14] 16.3 Bulk, thin-film and other silicon-based solar cells

[20p-133-1] Evaluation and analysis of spatial distribution of IQE of PERC

△ [20p-133-2] Analysis of quantum efficiency in bifacial interdigitated-back-contact (IBC) crystalline silicon solar cell

[20p-133-3] Fully ion implanted interdigitated back contact silicon solar cell with gap structure between emitter and BSF via a self-aligned process

[20p-133-4] Formation of counter-doped n-a-Si films with good passivation quality by plasma ion implantation

▲ [20p-133-5] Controlling Solution Surface Tension for the Cleaning of Small Size Textured Si Surface to Obtain Extremely Low Surface Recombination Velocity of 0.6 cm/s

[20p-133-6] Effect of the microstructure of interfacial i-layers on the photovoltaic performance
in a-Si:H/c-Si heterojunction solar cells

[20p-133-7] Analysis of void structures near a-Si:H/c-Si heterointerfaces: Effect of doping on positron annihilation in a-Si:H

[20p-133-8] Passivation Quality of a-Si_1-xO_x:H Thin Film

[20p-133-9] Influence of illumination during ITO sputtering on passivation performance at a-Si:H/c-Si interface

△ [20p-133-10] Evaluation of ITO/a-Si interface chemical bonding states fabricated by reactive plasma deposition using hard X-ray photoemission spectroscopy

△ [20p-133-11] Local Structure of TiO_x/SiO_x/c-Si Heterointerface with Superior Passivation Performance Revealed by Electron Energy Loss Spectroscopy

▼ [20p-133-12] Photovoltaic performance of PEDOT:PSS/c-Si junction solar cells by adding ferroelectric polymer thin-layer

[20p-133-13] Silicon heterojunction solar cells with a sputtered p-type emitter structure

[20p-133-14] Low Damage Deposition of Tungsten Oxide as Hole Transport Layer for Silicon Heterojunction Solar Cell

Authentication

Session information

[20p-133-1~14] 16.3 Bulk, thin-film and other silicon-based solar cells

△ [20p-133-2] Analysis of quantum efficiency in bifacial interdigitated-back-contact (IBC) crystalline silicon solar cell

▲ [20p-133-5] Controlling Solution Surface Tension for the Cleaning of Small Size Textured Si Surface to Obtain Extremely Low Surface Recombination Velocity of 0.6 cm/s

△ [20p-133-10] Evaluation of ITO/a-Si interface chemical bonding states fabricated by reactive plasma deposition using hard X-ray photoemission spectroscopy

△ [20p-133-11] Local Structure of TiOx/SiOx/c-Si Heterointerface with Superior Passivation Performance Revealed by Electron Energy Loss Spectroscopy

▼ [20p-133-12] Photovoltaic performance of PEDOT:PSS/c-Si junction solar cells by adding ferroelectric polymer thin-layer

Authentication

△ [20p-133-11] Local Structure of TiO_x/SiO_x/c-Si Heterointerface with Superior Passivation Performance Revealed by Electron Energy Loss Spectroscopy