Poster presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[21a-PA3-1~20] 13.8 Optical properties and light-emitting devices

Fri. Sep 21, 2018 9:30 AM - 11:30 AM PA (Event Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[21a-PA3-1] Dependence of structural and luminescent characteristics in ZnO thin films prepared by mist-CVD method on substrate temperrature (２)

〇Yoshiki Saito¹, Shogo Saeki¹, Takeshi Kanno¹, Koshi Nishikawa¹, Kou Takasaki¹, Haruki Fukada¹, Atsushi A. Yamaguchi¹ (1.Kanazawa Institute df Technology)

9:30 AM - 11:30 AM

[21a-PA3-2] Fluence dependence of pulsed laser ablation in liquids for KSrPO₄:Eu, KBaPO₄:Eu phosphor

〇Masaya Tsuta¹, Susumu Nakamura², Ariyuki Kato¹ (1.Nagaoka Univ., 2.Nagaoka Inst.)

9:30 AM - 11:30 AM

[21a-PA3-3] Electron Trap and Release Process for Afterglow in Pr, Al co-doped CaTiO₃ Crystals

〇(M2)Ayaka Igarashi¹, Yasushi Nanai², Hayato Kamioka¹ (1.Nihon Univ., 2.Aoyama Gakuin Univ.)

9:30 AM - 11:30 AM

[21a-PA3-4] Syntheses and evaluation of α-Zn₂SiO₄ thin films

〇Kentaro Matsuzaki¹, Hikaru Saito¹, Satoshi Hata¹, Kosuke Watanabe¹, Miki inada¹ (1.Kyushu Univ.)

9:30 AM - 11:30 AM

[21a-PA3-5] Cooling speed dependence of luminescence properties of Pr³⁺-doped Bi₂O₃-GeO₂ crystals

〇(M2)Kyohei Ishii¹, Yasushi Nanai¹, Shingo Fuchi¹ (1.Aoyama Gakuin Univ.)

9:30 AM - 11:30 AM

▲ [21a-PA3-6] Room Temperature Photo- and Electroluminescence from Ion Implanted Silicon-Germanium

〇(M2C)Nikolay Balakleyskiy¹, Nikolay Gerasimenko¹, Vadim Pirogov¹ (1.National Research Univ. of Electronic Technology)

9:30 AM - 11:30 AM

[21a-PA3-7] Luminescence properties of Cr ion doped Mg₂SiO₄ for NIR wideband light sources

〇(M1)Ryota Ishida¹, Yuki Urabe¹, Seiya Nishimura¹, Yasushi Nanai¹, Shingo Huchi¹ (1.Aoyama gakuin Univ.)

9:30 AM - 11:30 AM

[21a-PA3-8] Nature of Shallow electron traps in CeGAGG crystals

〇Toru Yagihashi¹, Shinta Watanabe², Mamoru Kitaura¹, Kei Kamada³, Shunsuke Kurosawa^1,3, Akimasa Ohnishi¹, Kazuhiko Hara⁴ (1.Yamagata univ., 2.Nagoya univ., 3.Tohoku Univ. NICHe, 4.Shizuoka Univ. RIE)

9:30 AM - 11:30 AM

[21a-PA3-9] Surface modification of quantum dots for quantum-dot light-emitting diodes (QLEDs)

〇(M2)Shunta Nabetani¹, Taro Uematsu¹, Genichi Motomura², Tsuzuki Toshimitsu², Torimoto Tsukasa³, Kuwabata Susumu¹ (1.Osaka Univ., 2.NHK., 3.Nagoya Univ.)

9:30 AM - 11:30 AM

△ [21a-PA3-10] Electronic structure of core/shell quantum dot fluorophore investigated by photoinduced electron transfer

〇Takuya Sasakura¹, Taro Uematsu¹, Tsukasa torimoto², Susumu Kuwabata¹ (1.Osaka Univ., 2.Nagoya Univ.)

9:30 AM - 11:30 AM

[21a-PA3-11] Temperature dependence of spin dynamics at coupled excited states of InGaAs quantum dots

〇Shino Sato¹, Satoshi Hiura², Junichi Takayama², Akihiro Murayama² (1.Faculty of Engineering, Hokkaido Univ., 2.IST, Hokkaido Univ.)

9:30 AM - 11:30 AM

[21a-PA3-12] Fabrication of molybdenum trioxide and core-shell quantum dot thin film by coating method and its application to light emitting diode

〇(M1)Yu Kamada¹, Naoki Ohtani¹ (1.Doushisha Univ.)

9:30 AM - 11:30 AM

[21a-PA3-13] Optical Properties of Colloidal Quantum-Dots Dispersed in Liquid Solution Embedded in a Planar Microcavity

〇Atsushi Arai¹, Takuya Hosokawa¹, Masaru Oda¹, Hisao Kondo² (1.Kyushu Inst.of Tech., 2.Ehime Univ.)

9:30 AM - 11:30 AM

[21a-PA3-14] Crystal growth and evaluation of Ga₂O₃ nanowires

〇Yuki Nakahata¹, Ozaki Shunji¹ (1.Graduate School of Science and Technology, Gunma University)

9:30 AM - 11:30 AM

[21a-PA3-15] Wavelength dependence of permittivity modulation at GaAs surface induced by surface acoustic waves

〇(M1)Tomoki Hiratsuka¹, Naoyuki Yoshida², Hiroyuki Bando¹, Toshio Matsusue¹ (1.Chiba Univ., 2.Chiba Univ. AIS)

9:30 AM - 11:30 AM

[21a-PA3-16] Study on the precious measurement of the nonlinear refractive index in InP thick film using closed aperture Z-scan technique

〇(M2)Soma Nishibe¹, Isana Morita², Masaki Oishi¹, Toshio Matsusue¹, Hiroyuki Bando¹ (1.Chiba Univ., 2.Chiba Univ. Eng.)

9:30 AM - 11:30 AM

[21a-PA3-17] Crystal growth and optical properties of ZnGa₂Se₄ semiconductor

〇Shingo Mukada¹, Shunji Ozaki¹ (1.Gunma Univ.)

9:30 AM - 11:30 AM

[21a-PA3-18] Crystal growth and evaluation of Cu₂GeSe₃ semiconductor

〇Shun Matsumura¹, Shunji Ozaki¹ (1.Gunma Univ.)

9:30 AM - 11:30 AM

[21a-PA3-19] Application of Normalization Procedure for Modulation Spectroscopy in TiO₂

〇Shuhei Shinmura¹, Kobayashi Eiichi¹, Makino Takayuki¹, Ito Seigo² (1.Fukui. Univ., 2.Hyogo Univ.)

9:30 AM - 11:30 AM

[21a-PA3-20] Photoluminescence properties of TlBr crystals for radiation detectors

〇Yuto Yasui¹, Toshiyuki Onodera², Yong-Gu Shim³, Mamedov Nazim⁴ (1.Chiba Inst., 2.Tohoku Inst., 3.Osaka Pref. Univ., 4.Azerbaijan Inst. Physics.)

Session information

[21a-PA3-1~20] 13.8 Optical properties and light-emitting devices

[21a-PA3-1] Dependence of structural and luminescent characteristics in ZnO thin films prepared by mist-CVD method on substrate temperrature (２)

[21a-PA3-2] Fluence dependence of pulsed laser ablation in liquids for KSrPO₄:Eu, KBaPO₄:Eu phosphor

[21a-PA3-3] Electron Trap and Release Process for Afterglow in Pr, Al co-doped CaTiO₃ Crystals

[21a-PA3-4] Syntheses and evaluation of α-Zn₂SiO₄ thin films

[21a-PA3-5] Cooling speed dependence of luminescence properties of Pr³⁺-doped Bi₂O₃-GeO₂ crystals

▲ [21a-PA3-6] Room Temperature Photo- and Electroluminescence from Ion Implanted Silicon-Germanium

[21a-PA3-7] Luminescence properties of Cr ion doped Mg₂SiO₄ for NIR wideband light sources

[21a-PA3-8] Nature of Shallow electron traps in CeGAGG crystals

[21a-PA3-9] Surface modification of quantum dots for quantum-dot light-emitting diodes (QLEDs)

△ [21a-PA3-10] Electronic structure of core/shell quantum dot fluorophore investigated by photoinduced electron transfer

[21a-PA3-11] Temperature dependence of spin dynamics at coupled excited states of InGaAs quantum dots

[21a-PA3-12] Fabrication of molybdenum trioxide and core-shell quantum dot thin film by coating method and its application to light emitting diode

[21a-PA3-13] Optical Properties of Colloidal Quantum-Dots Dispersed in Liquid Solution Embedded in a Planar Microcavity

[21a-PA3-14] Crystal growth and evaluation of Ga₂O₃ nanowires

[21a-PA3-15] Wavelength dependence of permittivity modulation at GaAs surface induced by surface acoustic waves

[21a-PA3-16] Study on the precious measurement of the nonlinear refractive index in InP thick film using closed aperture Z-scan technique

[21a-PA3-17] Crystal growth and optical properties of ZnGa₂Se₄ semiconductor

[21a-PA3-18] Crystal growth and evaluation of Cu₂GeSe₃ semiconductor

[21a-PA3-19] Application of Normalization Procedure for Modulation Spectroscopy in TiO₂

[21a-PA3-20] Photoluminescence properties of TlBr crystals for radiation detectors

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