The 79th JSAP Autumn Meeting, 2018

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Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[18p-235-1~14] 15.5 Group IV crystals and alloys

Tue. Sep 18, 2018 1:15 PM - 5:00 PM 235 (3Ｆ_Lounge２)

Keisuke Arimoto(Univ. of Yamanashi), Katsunori Makihara(Nagoya Univ.)

1:45 PM - 2:00 PM

[18p-235-3] Sn precipitation process during growth of Ge1-xSnx thin films with MOCVD

〇Yusuke Miki1, Wakana Takeuchi1,2, Osamu Nakatsuka1,3, Shigeaki Zaima4 (1.Grad. Sch. of Eng., Nagoya Univ., 2.Aichi Inst. of Technol., 3.IMaSS, Nagoya Univ., 4.IIFS, Nagoya Univ.)

Keywords:metal-organic chemical vapor deposition method, Ge1-xSnx