Oral presentation

[18a-235-1~9] 15.5 Group IV crystals and alloys

Tue. Sep 18, 2018 9:30 AM - 11:45 AM 235 (3Ｆ_Lounge２)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

△ [18a-235-1] Ultra-low temperature (80℃) layer exchange growth of polycrystalline Ge thin films for flexible thermoelectric application

〇Kinta Kusano¹, Mikie Tsuji¹, Takashi Suemasu¹, Kaoru Toko^1,2 (1.Univ. of Tsukuba, 2.JST PRESTO)

9:45 AM - 10:00 AM

[18a-235-2] Formation of Ge₁_-_xSn_xstripes using melting growth method and evaluation of electric properties

〇Kouta Takahashi^1,2, Yuta Imai¹, Taiki Nishijima³, Satoshi Shimizu³, Masashi Kurosawa^1,4,5, Isao Tsunoda³, Osamu Nakatsuka^1,6, Shigeaki Zaima⁷ (1.Grad. Sch. of Eng., Nagoya Univ., 2.JSPS, 3.NIT, Kumamoto College, 4.IAR, Nagoya Univ., 5.JST-PRESTO, 6.IMaSS, Nagoya Univ., 7.IIFS, Nagoya Univ.)

10:00 AM - 10:15 AM

△ [18a-235-3] Synthesis of GeSn particles with high substitutional Sn concentration by pulsed laser depositon

〇(M1)Teppei Nakashima¹, Toshifumi Kikuchi^1,2, Kaname Imokawa^1,2, Daisuke Nakamura¹, Hiroshi Ikenoue^1,2 (1.Kyushu Univ., 2.Dept. of Gigaphoton NEXT GLP, Kyushu Univ.)

10:15 AM - 10:30 AM

△ [18a-235-4] Demonstration of mm-long Nearly Intrinsic GeSn Single-crystalline Wires on Quartz Substrate by Nucleation-controlled Liquid-phase Crystallization

〇Youki Wada¹, Keitaro Inoue¹, Takuji hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

10:30 AM - 10:45 AM

[18a-235-5] Poly-crystalline Ge_1-xSn_x Formed on Self-assembled Sn Nanodots for Thermal Conductivity Reduction

〇Junya Utsumi¹, Tomokuni Ishimaru¹, Yasuhiro Hayakawa², Yosuke Shimura² (1.Grad. Sch. Eng., Shizuoka Univ., 2.RIE, Shizuoka Univ.)

10:45 AM - 11:00 AM

[18a-235-6] Low temperature Sn induced lateral solid phase crystallization for amorphous Ge/SiO₂

〇Hiroki Kanakogi¹, Yoshiki Sato¹, Taiki Nishijima¹, Daisuke Ogawa¹, Kenichiro Takakura¹, Isao Tsunoda¹ (1.NIT Kumamoto College)

11:00 AM - 11:15 AM

[18a-235-7] EDX evaluation of Au induced lateral crystallization for amorphous Ge/SiO₂

〇Takeru Hamasaki¹, Takuya Sakai¹, Kazuaki Sumi¹, Kenichiro Takakura¹, Isao Tsunoda¹ (1.NIT Kumamoto College)

11:15 AM - 11:30 AM

[18a-235-8] Formation of a large-grained GaAs film using Al-induced crystallized Ge as a seed layer

〇Takeshi Nishida¹, Masaya Saito¹, Kenta Moto¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba)

11:30 AM - 11:45 AM

[18a-235-9] Precursor heating deposition effects on solid-phase crystallization of Sb-doped Ge and Si thin films

〇Daichi Takahara¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba)

Oral presentation

[18p-235-1~14] 15.5 Group IV crystals and alloys

Tue. Sep 18, 2018 1:15 PM - 5:00 PM 235 (3Ｆ_Lounge２)

Keisuke Arimoto(Univ. of Yamanashi), Katsunori Makihara(Nagoya Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

[18p-235-1] Formation and Optoelectronic Characterization of High-Si-Content Strain-Relaxed Ge_1-x-ySi_xSn_y/Ge_1-xSn_x/Ge_1-x-ySi_xSn_y Double-Heterostructure

〇Masahiro Fukuda¹, Mitsuo Sakashita¹, Masashi Kurosawa¹, Osamu Nakatsuka^1,2, Shigeaki Zaima³ (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Inst. Innovation for Future Soc., Nagoya Univ.)

1:30 PM - 1:45 PM

[18p-235-2] Enhancement of Strain-relaxation for Ge₁_-_x_-_ySi_xSn_y Epitaxial Layer Using Ion-implanted Ge Substrate

〇Hidetaka Sofue¹, Masahiro Fukuda¹, Osamu Nakatsuka^1,2, Shigeaki Zaima³ (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.IIFS, Nagoya Univ.)

1:45 PM - 2:00 PM

[18p-235-3] Sn precipitation process during growth of Ge_1-xSn_x thin films with MOCVD

〇Yusuke Miki¹, Wakana Takeuchi^1,2, Osamu Nakatsuka^1,3, Shigeaki Zaima⁴ (1.Grad. Sch. of Eng., Nagoya Univ., 2.Aichi Inst. of Technol., 3.IMaSS, Nagoya Univ., 4.IIFS, Nagoya Univ.)

2:00 PM - 2:15 PM

△ [18p-235-4] Evaluation of Three-Dimensional Strain in Ge_1-xSn_x Mesa Structure Using Reciprocal Space Mapping

〇Yuki Takahashi¹, Ryo Yokogawa^1,2, Ichiro Hirosawa³, Kohei Suda¹, Atsushi Ogura¹ (1.Meiji Univ., 2.JSPS Research Fellow, 3.Japan Synchrotron Radiation Research Institute (JASRI))

2:15 PM - 2:30 PM

[18p-235-5] Crystal growth of Si_1-xSn_x thin films on GaSb substrates

〇Ryuji Tange¹, Masashi Kurosawa^1,2,3, Osamu Nakatsuka^1,4, Shigeaki Zaima⁵ (1.Grad. Sch. of Eng., Nagoya. Univ., 2.IAR, Nagoya. Univ., 3.JST-PRESTO, 4.IMaSS, Nagoya. Univ., 5.IIFS, Nagoya. Univ.)

2:30 PM - 2:45 PM

[18p-235-6] New development of layer exchange: Fe-induced crystallization for multilayer graphene

〇Yoshiki Nakajima¹, Hiromasa Murata¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba)

2:45 PM - 3:00 PM

[18p-235-7] Hetero-epitaxial Growth of Al on Ge(111) by Vacuum Evaporation

〇Masato Kobayashi¹, Akio Ohta¹, Masashi Kurosawa¹, Masaaki Araidai¹, Mitsuhisa ikeda¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

3:15 PM - 3:30 PM

△ [18p-235-8] Shape uniformization of Si-nanodots by Si(110)-16×2 reconstructed structure

〇Masahiro Yano¹, Satoshi Yasuda¹, Hidehito Asaoka¹ (1.JAEA ASRC)

3:30 PM - 3:45 PM

[18p-235-9] Optical properties of Ge quantum dots in circular DBR

〇Daisuke Ishii¹, Kouhei Mizutani¹, Namiko Harada¹, Xuejun Xu¹, Takuya Maruizumi¹, Kentarou Sawano¹ (1.Tokyo City Univ.)

3:45 PM - 4:00 PM

△ [18p-235-10] Evaluation of Strain Relaxation in Patterned Carbon Doped Silicon

〇Kazutoshi Yoshioka¹, Ryo Yokogawa^1,2, Naomi Sawamoto¹, Atsushi Ogura¹ (1.Meiji Univ., 2.JSPS Research Fellow DC)

4:00 PM - 4:15 PM

[18p-235-11] Fabrication of strained Ge micro bridge by wet etching

〇Yosiki Tamura¹, Ryouta Okubo¹, Xuejun Xu¹, Takuya Maruizumi¹, Kentarou Sawano¹ (1.Tokyo City Univ.)

4:15 PM - 4:30 PM

△ [18p-235-12] Strain Evaluation of C or Ge implanted and Laser-annealed SiGe Thin Layers

〇Shota Komago¹, Tatsumi Murakami¹, Kazutoshi Yoshioka¹, Ryo Yokogawa^1,2, Naomi Sawamoto¹, John Borland³, Takashi Kuroi⁴, Toshiyuki Tabata⁵, Karim Huet⁵, Naoto Horiguchi⁶, Atsushi Ogura¹ (1.Meiji Univ., 2.JSPS Research Fellow DC, 3.J.O.B. Technologies, 4.Nissin Ion Equipment, 5.LASSE/Screen, 6.IMEC)

4:30 PM - 4:45 PM

[18p-235-13] Determination of Ge Fraction using Broad Peaks in Raman spectra of SiGe with High Fraction using Oil-Immersion Raman Spectroscopy

〇Ryo Yokogawa^1,2, Masato Koharada¹, Kazutoshi Yoshioka¹, Seiya Ishihara^1,2, Koji Usuda³, Atsushi Ogura¹ (1.Meiji Univ., 2.JSPS Research Fellow DC, 3.Toshiba Memory Corp.)

4:45 PM - 5:00 PM

[18p-235-14] Effect of cooling rate and annealing temperature on epitaxial growth of SiGe on Si substrate by printing and firing

〇Shogo Fukami¹, Yoshihiko Nakagawa¹, Kazuhiro Gotoh¹, Yasuyoshi Kurokawa¹, Masahiro Nakahara², Marwan Dhamrin², Noritaka Usami¹ (1.Nagoya Univ., 2.Toyo Aluminium)

Poster presentation

[19p-PB7-1~7] 15.5 Group IV crystals and alloys

Wed. Sep 19, 2018 4:00 PM - 6:00 PM PB (Shirotori Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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4:00 PM - 6:00 PM

[19p-PB7-1] Fabrication of strained SiGe (111) -On-Insulator substrate by selective etching

〇Shuichiro Ohshima¹, yu Sakamoto¹, Michihiro Yamada², Kohei Hamaya², kentarou Sawano¹ (1.Tokyo City Univ., 2.Osaka Univ.)

4:00 PM - 6:00 PM

[19p-PB7-2] Thermal stability of lattice strain in SiGe layers formed on Si(110)

〇(M1)Yusuke Oshima¹, Takane Yamada¹, Keisuke Arimoto¹, Junji Yamanaka¹, Kosuke O Hara¹, Kiyokazu Nakagawa¹ (1.Univ. of Yamanashi)

4:00 PM - 6:00 PM

[19p-PB7-3] Mobility evaluation of tensile-strained Si/relaxed SiGe/Si(110) heterostructures using gate-voltage-applied Hall measurement

〇(M1)Daichi Namiuchi¹, Kei Sato¹, Kentarou Sawano², Keisuke Arimoto¹, Jyunji Yamanaka¹, Kosuke O. Hara¹, Kiyokazu Nakagawa¹ (1.Yamanashi Univ., 2.ARL Tokyo City Univ.)

4:00 PM - 6:00 PM

[19p-PB7-4] Formation of c-SiGe graded layer on c-Si substrate by thermal treatment (II)

〇(M2)NORRASHIDAH RASHID¹, Mohammad Faris Mohammad Fuad², Takara Hirose², Tetsuya Kaneko^1,2, Masao Isomura^1,2 (1.Tokai Univ., 2.Tokai Univ .)

4:00 PM - 6:00 PM

[19p-PB7-5] Si Thin Film Growth on Epitaxial Graphene using Ultra Thin AlN Intermediate Layer

〇(M2)Taiji Terai¹, Ishimaru Daiki¹, Kamata Yuta¹, Takeuchi Tomoya¹, Hashimoto Akihiro¹ (1.Fukui Univ.)

4:00 PM - 6:00 PM

[19p-PB7-6] Formation of tin mediated GeSn nanodots by vacuum evaporation

〇(M2)Kazuto Tsushima¹, Kensuke Takita¹, Takehiko Tawara², Kouta Tateno², Guoqiang Zhang², Hideki Gotoh², Hiroshi Okamoto¹ (1.Hirosaki Univ., 2.NTT Basic Res. Labs.)

4:00 PM - 6:00 PM

[19p-PB7-7] Study on the surface morphology development of SiGe/Si(110) structures

〇(M1C)Shingo Saito¹, Yuichi Sano¹, Takane Yamada¹, Kosuke O. Hara¹, Junji Yamanaka¹, Keisuke Arimoto¹, Kiyokazu Nakagawa¹ (1.Yamanashi Univ.)

Sessions

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[18a-235-1~9] 15.5 Group IV crystals and alloys

△ [18a-235-1] Ultra-low temperature (80℃) layer exchange growth of polycrystalline Ge thin films for flexible thermoelectric application

[18a-235-2] Formation of Ge₁_-_xSn_xstripes using melting growth method and evaluation of electric properties

△ [18a-235-3] Synthesis of GeSn particles with high substitutional Sn concentration by pulsed laser depositon

△ [18a-235-4] Demonstration of mm-long Nearly Intrinsic GeSn Single-crystalline Wires on Quartz Substrate by Nucleation-controlled Liquid-phase Crystallization

[18a-235-5] Poly-crystalline Ge_1-xSn_x Formed on Self-assembled Sn Nanodots for Thermal Conductivity Reduction

[18a-235-6] Low temperature Sn induced lateral solid phase crystallization for amorphous Ge/SiO₂

[18a-235-7] EDX evaluation of Au induced lateral crystallization for amorphous Ge/SiO₂

[18a-235-8] Formation of a large-grained GaAs film using Al-induced crystallized Ge as a seed layer

[18a-235-9] Precursor heating deposition effects on solid-phase crystallization of Sb-doped Ge and Si thin films

[18p-235-1~14] 15.5 Group IV crystals and alloys

[18p-235-1] Formation and Optoelectronic Characterization of High-Si-Content Strain-Relaxed Ge_1-x-ySi_xSn_y/Ge_1-xSn_x/Ge_1-x-ySi_xSn_y Double-Heterostructure

[18p-235-2] Enhancement of Strain-relaxation for Ge₁_-_x_-_ySi_xSn_y Epitaxial Layer Using Ion-implanted Ge Substrate

[18p-235-3] Sn precipitation process during growth of Ge_1-xSn_x thin films with MOCVD

△ [18p-235-4] Evaluation of Three-Dimensional Strain in Ge_1-xSn_x Mesa Structure Using Reciprocal Space Mapping

[18p-235-5] Crystal growth of Si_1-xSn_x thin films on GaSb substrates

[18p-235-6] New development of layer exchange: Fe-induced crystallization for multilayer graphene

[18p-235-7] Hetero-epitaxial Growth of Al on Ge(111) by Vacuum Evaporation

△ [18p-235-8] Shape uniformization of Si-nanodots by Si(110)-16×2 reconstructed structure

[18p-235-9] Optical properties of Ge quantum dots in circular DBR

△ [18p-235-10] Evaluation of Strain Relaxation in Patterned Carbon Doped Silicon

[18p-235-11] Fabrication of strained Ge micro bridge by wet etching

△ [18p-235-12] Strain Evaluation of C or Ge implanted and Laser-annealed SiGe Thin Layers

[18p-235-13] Determination of Ge Fraction using Broad Peaks in Raman spectra of SiGe with High Fraction using Oil-Immersion Raman Spectroscopy

[18p-235-14] Effect of cooling rate and annealing temperature on epitaxial growth of SiGe on Si substrate by printing and firing

[19p-PB7-1~7] 15.5 Group IV crystals and alloys

[19p-PB7-1] Fabrication of strained SiGe (111) -On-Insulator substrate by selective etching

[19p-PB7-2] Thermal stability of lattice strain in SiGe layers formed on Si(110)

[19p-PB7-3] Mobility evaluation of tensile-strained Si/relaxed SiGe/Si(110) heterostructures using gate-voltage-applied Hall measurement

[19p-PB7-4] Formation of c-SiGe graded layer on c-Si substrate by thermal treatment (II)

[19p-PB7-5] Si Thin Film Growth on Epitaxial Graphene using Ultra Thin AlN Intermediate Layer

[19p-PB7-6] Formation of tin mediated GeSn nanodots by vacuum evaporation

[19p-PB7-7] Study on the surface morphology development of SiGe/Si(110) structures

Authentication

Sessions

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[18a-235-1~9] 15.5 Group IV crystals and alloys

△ [18a-235-1] Ultra-low temperature (80℃) layer exchange growth of polycrystalline Ge thin films for flexible thermoelectric application

△ [18a-235-3] Synthesis of GeSn particles with high substitutional Sn concentration by pulsed laser depositon

△ [18a-235-4] Demonstration of mm-long Nearly Intrinsic GeSn Single-crystalline Wires on Quartz Substrate by Nucleation-controlled Liquid-phase Crystallization

[18p-235-1~14] 15.5 Group IV crystals and alloys

△ [18p-235-4] Evaluation of Three-Dimensional Strain in Ge1-xSnx Mesa Structure Using Reciprocal Space Mapping

△ [18p-235-8] Shape uniformization of Si-nanodots by Si(110)-16×2 reconstructed structure

△ [18p-235-10] Evaluation of Strain Relaxation in Patterned Carbon Doped Silicon

△ [18p-235-12] Strain Evaluation of C or Ge implanted and Laser-annealed SiGe Thin Layers

[19p-PB7-1~7] 15.5 Group IV crystals and alloys

Authentication

△ [18p-235-4] Evaluation of Three-Dimensional Strain in Ge_1-xSn_x Mesa Structure Using Reciprocal Space Mapping