[19p-PB7-1~7] 15.5 Group IV crystals and alloys

[19p-PB7-7] Study on the surface morphology development of SiGe/Si(110) structures

〇(M1C)Shingo Saito¹, Yuichi Sano¹, Takane Yamada¹, Kosuke O. Hara¹, Junji Yamanaka¹, Keisuke Arimoto¹, Kiyokazu Nakagawa¹ (1.Yamanashi Univ.)

Keywords:crystal growth

For improving the performance of electronic devices, improvement of mobility is effective. Previous research showed that strained Si film in "strained Si/SiGe/Si(110)" structure acts as high-hole-mobility layer. In order to obtain higher mobility, it is necessary to improve the flatness of the surface. Although it is known that not only the striation related to microtwins inside the crystal but also other characteristic surface morphologies appear on the (110)-oriented Si/SiGe heterostructures, their formation mechanisms have not been clarified. In order to form a high-quality film, findings on crystal defects inside the SiGe layer and the process of the surface morphology formation are important. Therefore, in this experiment, change of the surface morphology and degree of strain relaxation accompanying the progress of crystal growth of "Si_0.88Ge_0.12/ Si (110)" structure is investigated.