[19p-PB7-1~7] 15.5 Group IV crystals and alloys

[19p-PB7-6] Formation of tin mediated GeSn nanodots by vacuum evaporation

〇(M2)Kazuto Tsushima¹, Kensuke Takita¹, Takehiko Tawara², Kouta Tateno², Guoqiang Zhang², Hideki Gotoh², Hiroshi Okamoto¹ (1.Hirosaki Univ., 2.NTT Basic Res. Labs.)

Keywords:nanodots, Ge, tin

We have reported the fabrication method of Bi-mediated Ge nanodots using vacuum evaporation and low-temperature annealing to date. Here, we have newly tried to form tin-mediated GeSn nanodots. We have successfully observed the crystallization of the nanodots even under the condition of 200°C annealing. Although tin compositions are varied from 3 to 17% between and among the nanodots, some nanodots without tin segregation also existed. We also found that the shape of the nanodots can be controlled by the tin layer thickness.