[19p-PB7-1~7] 15.5 Group IV crystals and alloys

[19p-PB7-2] Thermal stability of lattice strain in SiGe layers formed on Si(110)

〇(M1)Yusuke Oshima¹, Takane Yamada¹, Keisuke Arimoto¹, Junji Yamanaka¹, Kosuke O Hara¹, Kiyokazu Nakagawa¹ (1.Univ. of Yamanashi)

Keywords:semiconductor, strained Si

It is known that hole mobility is increased by forming an tensile-strained Si layer on strain-relaxed SiGe/Si(110) substrate. It has been reported that the high-temperature thermal treatment during the device fabrication process causes problems such as diffusion of Ge into the Si layer, relaxation of strain in the Si layer, increase in crystal defect density in the case of (001)-oriented strained Si. Therefore, in this study, thermal stability of lattice strain of Si/SiGe/Si(110) heterostructure was investigated.