Enhancement of Strain-relaxation for Ge1-x-ySixSny Epitaxial Layer Using Ion-implanted Ge Substrate

Hidetaka Sofue; Masahiro Fukuda; Osamu Nakatsuka; Shigeaki Zaima

Presentation information

Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[18p-235-1~14] 15.5 Group IV crystals and alloys

Tue. Sep 18, 2018 1:15 PM - 5:00 PM 235 (3Ｆ_Lounge２)

Keisuke Arimoto(Univ. of Yamanashi), Katsunori Makihara(Nagoya Univ.)

1:30 PM - 1:45 PM

[18p-235-2] Enhancement of Strain-relaxation for Ge₁_-_x_-_ySi_xSn_y Epitaxial Layer Using Ion-implanted Ge Substrate

〇Hidetaka Sofue¹, Masahiro Fukuda¹, Osamu Nakatsuka^1,2, Shigeaki Zaima³ (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.IIFS, Nagoya Univ.)

Keywords:GeSiSn, Strain-relaxation

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Presentation information

[18p-235-1~14] 15.5 Group IV crystals and alloys

[18p-235-2] Enhancement of Strain-relaxation for Ge1-x-ySixSny Epitaxial Layer Using Ion-implanted Ge Substrate

[18p-235-2] Enhancement of Strain-relaxation for Ge₁_-_x_-_ySi_xSn_y Epitaxial Layer Using Ion-implanted Ge Substrate