[18p-PA5-1~28] 12.4 Organic light-emitting devices and organic transistors

[18p-PA5-17] Origin of threshold voltage shift in organic thin-film transistors by oxygen plasma treatment

Hajime Takahashi¹, 〇Masatoshi Kitamura¹, Yoshiaki Hattori¹, Yoshinari Kimura¹ (1.Kobe Univ.)

Keywords:organic transistors, threshold voltages, quantum chemical calculation

We have demonstrated the threshold voltage control in organic thin film transistor using oxygen plasma treatment to the SiO₂ gate dielectric. It is possible that the threshold voltage shift is attributed to negative charges caused by additional oxygen atoms at or near to the interface between the SiO₂ layer and organic layer. In this study, we have confirmed the existence of energy levels related to the negative charges by X-ray photoelectron spectroscopy (XPS). Also, we performed quantum chemical calculation for SiO₂ clusters to support the existence of the energy levels.