4:00 PM - 6:00 PM
[18p-PA5-19] Photo-irradiation effect of field-effect transistors using (NH4)2S treated PbS colloidal nano-dot films
Keywords:PbS colloidal nano-dots, (NH4)2S treatment, field-effect transistors
In this study, field-effect transistors (FETs) ware fabricated using ligand-removed PbS colloidal nano-dot thin films treated with (NH4)2S methanol solution. We already reported that higher carrier mobility was obtained using ammonium sulfide solution of higher sulfur concentration. In this report, irradiating the channel of the FET with a LED light, we measured the electric characteristics, and investigated photo-irradiation effect. Due to the light irradiation, the drain current and the carrier mobility increased by about 3 times, and 1.6 times, respectively.