The 79th JSAP Autumn Meeting, 2018

Presentation information

Poster presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[18p-PB2-1~7] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Tue. Sep 18, 2018 1:30 PM - 3:30 PM PB (Shirotori Hall)

1:30 PM - 3:30 PM

[18p-PB2-2] A Study on 3-axis Fully-Differential Au-Proof-Mass MEMS Accelerometer with Segmented Capacitance Detection Method

Shota Otobe1, Yamane Daisuke1, Konishi Toshifumi2, Safu Teruaki2, Iida Shin-ichi2, Ito Hiroyuki1, Ishihara noboru1, Machida Katsuyuki1, Masu Kazuya1 (1.Tokyo Institute of Technology, 2.NTT AT)

Keywords:MEMS accelerometer, Fully-differential, SCD

Microelectromechanical systems (MEMS) accelerometers with the resolution below 1 mG (G = 9.8 m/s2) can be used for various applications such as space, human motion monitoring, inertial navigation, and so on. MEMS accelerometer noise is dominated by Brownian noise, which is inversely proportional to the mass. We have developed a single Au proof-mass MEMS accelerometer fabricated by multi-layer metal technology. High-density of gold can reduce the noise when compared to conventional materials, such as silicon. For tri-axis design, we have reported segmented capacitance detection (SCD) for high resolution Au proof-mass MEMS accelerometers. The SCD can be realized by the segmented electrodes (SE) which simplify the MEMS device structure. In this work, we propose a tri-axis fully-differential electrodes structure MEMS accelerometer with SCD for sub-1mG resolution.