[18p-PB2-1~7] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

△ [18p-PB2-3] A Study on Multi-Physics Simulation Module of Time-Domain Capacitive Sensor Interface for MEMS Accelerometer

〇Kosuke Orihara¹, Tatsuya Koga¹, Shiro Dosho¹, Hiroyuki Ito¹, Daisuke Yamane¹, Toshifumi Konishi², Shinichi Iida², Noboru Ishihara¹, Katsuyuki Machida¹, Kazuya Masu¹ (1.Tokyo Tech., 2.NTT-AT)

Keywords:Time-Domain Capacitive Sensor Interface, MEMS Accelerometer, CMOS-MEMS

We have developed the high sensitive MEMS accelerometer using Au proof-mass MEMS device and time-domain capacitive sensing.In order to design the CMOS-MEMS accelerometer, the time-domain capacitive sensor interface module for multi-physics simulation.This paper describes the results of multi-physics simulation.