[18p-PB3-1~95] 17 Nanocarbon Technology (Poster)

[18p-PB3-47] Fabrication of lateral graphene tunnel diodes with ALD-Al₂O₃ dielectrics

〇Kanako Shiga¹, Kenta Sugawara², Akira Satou², Hirokazu Fukidome², Taiichi Otsuji², Takashi Uchino¹ (1.Tohoku Inst. Tech., 2.Tohoku Univ. RIEC)

Keywords:graphene, ALD-Al2O3, tunnel diode

In our last work, we presented results of the fabrication and electrical characterization of gate tunable graphene lateral tunnel diodes (GIG diodes) with plasma Si₃N₄ dielectrics and showed that the GIG diodes had p-type rectifying characteristics for positive gate voltages and n-type rectifying characteristics for negative gate voltages. In this paper, we report the results for the similar devices but tunnel regions between adjacent graphene layers were formed by atomic layer deposition on the native oxide of Al thin film to eliminate leakage current.