10:15 AM - 10:30 AM
[19a-131-6] Evaluation of SiC-Schottky barrier diode by multifunctional scanning probe microscope 2
Keywords:Silicon carbide, Scanning probe microscope, Kelvin Force Microscope
Performance improvement of silicon power devices as high performance power devices has been continuously and energetically performed.
As a result, it is approaching the limit that can be drawn out as silicon.
For this reason, silicon carbide has attracted attention in recent years as a high performance power device, and devices are being manufactured.
Therefore, we are evaluating various power devices by multifunctional scanning probe microscope.
In this study, SiC-SBD was evaluated with forward bias and with or without reverse bias.
In doing so, voltage was not applied to the device in a noncontact manner.
As a result, it is approaching the limit that can be drawn out as silicon.
For this reason, silicon carbide has attracted attention in recent years as a high performance power device, and devices are being manufactured.
Therefore, we are evaluating various power devices by multifunctional scanning probe microscope.
In this study, SiC-SBD was evaluated with forward bias and with or without reverse bias.
In doing so, voltage was not applied to the device in a noncontact manner.