[19a-224A-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19a-224A-4] 【Highlighted Presentation】Fabrication of γ-Al₂O₃/Ga₂O₃ superlattices

〇Yuji Kato¹, Rintaro Matsuo¹, Masataka Imura², Keiko Nakayama², Masaki Takeguchi², Takayoshi Oshima¹ (1.Saga Univ., 2.NIMS)

Keywords:Ga2O3, superlattice

The γ-Ga₂O₃, one of the metal oxide crystalline polymorphism, has been reported epitaxial stabilization on the Mg Al₂O₄ substrate. Moreover, it is reported that γ (Al_xGa_1-x) ₂O₃ is capable of full-rate solid solution. However, there are no reports on hetero junctions. Then, the first γ-Al₂O₃/Ga₂O₃ superlattice was fabricated.