Oral presentation

[19a-224A-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 19, 2018 9:30 AM - 11:30 AM 224A (224-1)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[19a-224A-1] Selective growth and micro patterning of β-Ga₂O₃ thin film by water lift off process and its characterization

〇Satoshi Itoh¹, Tomoaki Arashi¹, Takeshi Kawae¹ (1.Kanazawa Univ.)

9:45 AM - 10:00 AM

[19a-224A-2] Origin of Deep Pits Generated on (001) β-Ga₂O₃ Homoepitaxial Layers Grown by HVPE

〇Keita Konishi¹, Ken Goto^2,3,1, Hisashi Murakami^1,4, Akito Kuramata³, Shigenobu Yamakoshi^2,3, Yoshinao Kumagai^1,4 (1.Tokyo Univ. of Agri. & Tech., 2.Tamura Corp., 3.Novel Crystal Tech., 4.TUAT GIR)

10:00 AM - 10:15 AM

[19a-224A-3] Estimation of electric field in β-Ga₂O₃-based MOS photodiodes

〇Makoto Hashikawa¹, Sansei Tomizawa¹, Kohei Sasaki², Akihito Kuramata², Toshiyuki Oishi¹, Takayoshi Oshima¹ (1.Saga Univ., 2.Tamura Corp. & NCT, Inc)

10:15 AM - 10:30 AM

[19a-224A-4] 【Highlighted Presentation】Fabrication of γ-Al₂O₃/Ga₂O₃ superlattices

〇Yuji Kato¹, Rintaro Matsuo¹, Masataka Imura², Keiko Nakayama², Masaki Takeguchi², Takayoshi Oshima¹ (1.Saga Univ., 2.NIMS)

10:30 AM - 10:45 AM

[19a-224A-5] Fabrication of Ga₂O₃ on sapphire substrate with particles of Au

〇Yasuhisa Masuda¹, Kentaro Kaneko¹, Yuichi Oshima², Takashi Shinohe³, Shizuo Fujita¹ (1.Graduate School of Eng., Kyoto Univ., 2.NIMS, 3.FLOSFIA)

10:45 AM - 11:00 AM

[19a-224A-6] Thermodynamic Analysis of Ga₂O₃ Growth by Metalorganic Vapor Phase Epitaxy

〇Sakiko Yamanobe¹, Kento Yoshida¹, Keita Konishi¹, Yoshinao Kumagai^1,2 (1.Tokyo Univ. of Agri. & Tech., 2.TUAT GIR)

11:00 AM - 11:15 AM

[19a-224A-7] Fabrication of GaON Thin Films Using Mist-CVD

〇Masayuki Nakamura¹, Takayuki Kobayashi¹, Toshiaki Tatsuta¹, Shin-ichi Motoyama¹ (1.Samco Inc.)

11:15 AM - 11:30 AM

[19a-224A-8] Halide Vapor Phase Epitaxy of Single-Crystal c-In₂O₃(111) Using c-Plane Sapphire Off Substrates

〇Kenta Nagai¹, Hidetoshi Nakahata¹, Keita Konishi¹, Plamen P. Paskov², Bo Monemar^2,3, Yoshinao Kumagai^1,3 (1.Tokyo Univ. of Agri. & Tech., 2.Linkoping Univ., 3.TUAT GIR)

Oral presentation

[19p-224A-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 19, 2018 1:00 PM - 3:15 PM 224A (224-1)

Keisuke Ide(Tokyo Tech.), Shizuo Fujita(京大)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:30 PM

▲ [19p-224A-1] [JSAP Paper Award Speech] Delta-doped β-gallium oxide field-effect transistor

Sriram Krishnamoorthy¹, Zhanbo Xia², Sanyam Bajaj², Mark Brenner², 〇Siddharth Rajan² (1.Univ. of Utah, 2.Ohio State Univ.)

1:30 PM - 1:45 PM

[19p-224A-2] TFT Characterization and Effects of Substrate in Al-doped ZnO Thin-Film Transistor by Solution Method

〇Kazuyori Oura¹, Masatoshi Koyama¹, Toshihiko Maemoto¹, Shigehiko Sasa¹ (1.Osaka Inst. of Tech. NMRC)

1:45 PM - 2:00 PM

[19p-224A-3] Hot-wire hydrogenation for In-Sn-Zn-O and improvement of the TFT reliability

〇(M2)Toshiki Yanagisawa¹, Yuta Someya¹, Kousaku Shimizu¹ (1.Nihon Univ.)

2:00 PM - 2:15 PM

[19p-224A-4] Hump Phenomena of a-IGZO TFT with Top Gate Structure

〇Yuya Kuwahara¹, Kazushige Takechi¹, Jun Tanaka¹ (1.Tianma Japan)

2:15 PM - 2:30 PM

[19p-224A-5] Correspondence between PL spectra and conductive properties of ZnO films - III

〇Housei Akazawa¹ (1.NTT DIC)

2:30 PM - 2:45 PM

[19p-224A-6] Growth of ZnO nanorods by chemical bath deposition and their inorganic-organic hybrid heterojunctions with PEDOT:PSS

〇Shohei Obara¹, Tomoaki Terasako¹, Akira Miyata², Junichi Nomoto³, Tetsuya Yamamoto³ (1.Ehime Univ. Grad school, 2.Ehime Univ., 3.Kochi Univ. of Tech.)

2:45 PM - 3:00 PM

[19p-224A-7] Chemical Bath Deposition of ZnO Nanorods and Effects of Seed Layer on Their Structural and Photoluminescence Properties

〇Tomoaki Terasako¹, Shohei Obara¹, Masakazu Yagi², Junichi Nomoto³, Tetsuya Yamamoto³ (1.Grad. School Sci. Eng., Ehime Univ., 2.Natl. Inst. Technol., Kagawa Coll., 3.Research Inst., Kochi Univ. Technol.)

3:00 PM - 3:15 PM

[19p-224A-8] Carrier density in Ga-doped ZnO film and related crystalline defects after annealing

〇Yasuji Yamada¹, Yumika Yamada², Takumi Yamamoto³, Rei Sugiura³, Shuhei Funaki¹ (1.Shimane Unive., 2.Shimane Unive. 2, 3.Shimane Unive. 3)

Oral presentation

[20a-234A-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Sep 20, 2018 9:00 AM - 12:00 PM 234A (234-1)

Takashi Yasuda(Ishinomaki Senshu Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[20a-234A-1] High-Hall-mobility amorphous tin-doped In₂O₃ films of thicknesses of less than 50 nm

〇Yutaka Furubayashi¹, Hisashi Kitami^1,2, Toshiyuki Sakemi², Kimio Kinoshita², Makoto Maehara², Hisao Makino¹, Tetsuya Yamamoto¹ (1.Kochi Univ. Tech., 2.Sumitomo Heavy Industries, Ltd.)

9:15 AM - 9:30 AM

[20a-234A-2] Anomalous carrier transport of tin-doped In₂O₃ thin films irradiated with negative oxygen ions

〇Yutaka Furubayashi¹, Hisashi Kitami^1,2, Toshiyuki Sakemi², Kimio Kinoshita², Makoto Maehara², Hisao Makino¹, Tetsuya Yamamoto¹ (1.Kochi Univ. Tech., 2.Sumitomo Heavy Industries, Ltd.)

9:30 AM - 9:45 AM

[20a-234A-3] Electrical and optical properties of ATO thin films fabricated by mist CVD

〇(M1)Mariko Ueda¹, Li Liu¹, Shota Sato¹, Giang Dang², Toshiyuki Kawaharamura^1,2, Fujita Shizuo³, Hiroyuki Orita⁴, Takahiro Hiramatsu⁴ (1.School of Intelligent. Mech. Sys. Eng., Kochi Univ. of Tech., 2.Res.Inst., Kochi Univ. of Tech., 3.Kyoto Univ., 4.Toshiba Mitsubishi-Electric Industrial Systems)

9:45 AM - 10:00 AM

[20a-234A-4] Growth and characterization of AlTiO insulating films by mist CVD method

〇Kousi Nisiyama¹, Kazuki Nisimura¹, Takaaki Tsuda¹, Qiang Yin², Zenji Yatabe³, Kouji Sue², Yusui Nakamura^4,5 (1.GSST, Kumamoto Univ., 2.Fac. of Eng. Kumamoto Univ., 3.POIE Kumamoto Univ., 4.FAST, Kumamoto Univ., 5.Phoenics)

10:00 AM - 10:15 AM

[20a-234A-5] Low Temperature Formation of ZnO Films by Plasma-Assisted Mist-CVD

〇Tomotaka Kido¹, Tomoki Mikuriya¹, Rena Sugino¹, Yasutaka Nisi², Makoto Nakazumi², Koichiro Iwahori², Zenji Yatabe^1,3, Takao Namihira^1,4, Yusui Nakamura^1,5,6 (1.GSST Kumamoto Univ., 2.Nikon Corporation, 3.POIE Kumamoto Univ., 4.IPPS Kumamoto Univ., 5.FAST Kumamoto Univ., 6.Phoenics)

10:15 AM - 10:30 AM

[20a-234A-6] Improvement of crystallinity of two types of non-polar ZnO thin films on sapphire substrate formed by mist-CVD

〇Yudai Tanaka¹, Hironobu Tanoue¹, Yuki Nagao¹, Takumi Furukawa¹, Shoji Nagaoka^3,4, Zenji Yatabe^1,2, Yusui Nakamura^1,4 (1.GSST Kumamoto Univ., 2.POIE Kumamoto Univ., 3.Kumamoto IRI, 4.Phoenics)

10:45 AM - 11:00 AM

[20a-234A-7] Anisotropic growth of ZnO nanocrystal in chemical bath synthesis: growth mode control by selective growth window for its electrical uniformity

〇Kentaro Watanabe¹ (1.Tohoku Univ.)

11:00 AM - 11:15 AM

[20a-234A-8] 【Highlighted Presentation】Development of ultraviolet optical modulator using non-polar ZnO/ZnMgO multiple quantum wells (II)

〇Tomoki Abe¹, Shohei Iwagashita¹, Daiki Kimura¹, Hirofumi Kasada¹, Koshi Ando¹, Kunio Ichino¹, Kazuaki Akaiwa¹ (1.Tottori Univ.)

11:15 AM - 11:30 AM

[20a-234A-9] The origin and properties of SRH-type nonradiative recombination centers in ZnO

〇Shigefusa Chichibu¹, Kazunobu Kojima¹, Kazuto Koike², Mitsuaki Yano², Shun-ichi Gonda³, Shoji Ishibashi⁴, Akira Uedono⁵ (1.IMRAM, Tohoku Univ., 2.Osaka Inst. Tech., 3.ISIR, Osaka Univ, 4.CD-FMat, AIST, 5.Univ. of Tsukuba)

11:30 AM - 11:45 AM

[20a-234A-10] Fabrication of rock-salt structured MgZnO/MgO layered structures showing DUV emissions

〇Kyohei Ishii¹, Mizuki Ono², Takeyoshi Onuma², Kentaro Kaneko¹, Shizuo Fujita¹ (1.Kyoto Univ., 2.Kogakuin Univ.)

11:45 AM - 12:00 PM

[20a-234A-11] Random lasing from ZnO aggregate microparticles

〇(M1)Ryosuke Komatsu¹, Noriko Saito², Taisei Yamamoto^3,4, Toshihiro Nakamura¹ (1.Hosei Univ, 2.NIMS, 3.Osaka Univ, 4.Hakusui Tech)

Oral presentation

[20p-234A-1~18] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Sep 20, 2018 1:30 PM - 6:30 PM 234A (234-1)

Masataka Higashiwaki(NICT), Tetsuya Yamamoto(Kochi Univ. of Tech.), Mutsumi Kimura(Ryukoku Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[20p-234A-1] [Young Scientist Presentation Award Speech] Epitaxial growth and bandgap engineering of β-(Ga_1-ySc_y)₂O₃ films by PLD

〇Ryo Wakabayashi¹, Kohei Yoshimatsu¹, Akira Ohtomo^1,2 (1.Tokyo Tech., Dept. Chem. Sci. Eng., 2.MCES)

1:45 PM - 2:00 PM

△ [20p-234A-2] Observation of emission spots in HVPE (001) β-Ga₂O₃Schottky barrier diodes

〇(M1)Eitetsu Katagiri¹, Kohei Sasaki^2,3, Katsumi Kawasaki⁴, Jun Hirabayashi⁴, Akito Kuramata^2,3, Makoto Kasu¹ (1.Saga Univ., 2.Novel Crystal Tech., 3.Tamura Corp., 4.TDK Corp.)

2:00 PM - 2:15 PM

[20p-234A-3] Oxygen Partial Pressure and Growth Temperature Effects on the Growth of ε-Gallium Oxide on c-Plane Sappier Substrates via Halide Vapor Phase Epitaxy

〇(DC)Nao Takekawa¹, Mayuko Sato¹, Murakami Hisashi¹, Kumagai Yoshinao¹ (1.Tokyo Univ. of Agric. and Tech.)

2:15 PM - 2:30 PM

△ [20p-234A-4] Heteroepitaxial Growth of ε-Ga₂O₃Films on Sapphire and GaN templates by HVPE.

〇Mayuko Sato¹, Nao Takekawa¹, Keita Konishi¹, Hisashi Murakami¹, Yoshinao Kumagai¹ (1.Tokyo University of Agriculture and Technology)

2:30 PM - 2:45 PM

△ [20p-234A-5] Examination of film formation factor of solid phase epitaxy in room temperature of amorphous Ga₂O₃ by excimer laser annealing

〇(M1)Hiroyuki Morita¹, Tomoaki Oga¹, Nobuo Tsuchimine², Satoru Kaneko^3,1, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Tech. Materials, 2.TOSHIMA Manu., 3.KISTEC)

2:45 PM - 3:00 PM

△ [20p-234A-6] Fabrication of Cu doped p type AlO_x thin films by drop photochemical deposition

〇Masanari Umemura¹, Masaya Ichimura¹ (1.Nagoya Inst. Tech.)

3:15 PM - 3:30 PM

△ [20p-234A-7] Preparation of SiO₂/HfO₂ dielectric distributed Bragg reflectors using the reactive helicon-wave-excited-plasma sputtering method

〇Kohei Shima¹, Takumi Kasuya^1,2, Kazunobu Kojima^1,2, Shigefusa Chichibu^1,2 (1.IMRAM-Tohoku Univ., 2.Dept. Appl. Phys.-Tohoku Univ.)

3:30 PM - 3:45 PM

▼ [20p-234A-8] A perverse transparent oxide semiconductor, La:BaSnO₃

〇(M2)Mian Wei¹, Anup Sanchela², Joonhyuk Lee³, Gowoon Kim³, Hyoungjeen Jeen³, Bin Feng⁴, Yuichi Ikuhara⁴, Haijun Cho^1,2, Hiromichi Ohta^1,2 (1.IST-Hokkaido Univ., 2.RIES-Hokkaido Univ., 3.Pusan Natl Univ., 4.Univ. Tokyo)

3:45 PM - 4:00 PM

△ [20p-234A-9] Time-resolved photoluminescence study of process-induced defects in ZnO

〇(M1)Takumi Kasuya^1,2, Kohei Shima¹, Kazunobu Kojima^1,2, Shigefusa Chichibu^1,2 (1.IMRAM-Tohoku Univ., 2.Dept. Appl. Phys.-Tohoku Univ.)

4:00 PM - 4:15 PM

△ [20p-234A-10] Fabrication and Optimization of Zinc Oxide Thin Film Growth using Angle-Controlled Magnetron Sputtering

〇Takumi Hosaka^1,2, Yoshihito Yamagata^1,2, Takeo Ohsawa², Sergey Grachev³, Herve Montigaud³, Takamasa Ishigaki¹, Naoki Ohashi² (1.Hosei Univ., 2.NIMS, 3.Saint-Gobain Recherche)

4:15 PM - 4:30 PM

△ [20p-234A-11] Self-powered UV photodetectors based on CuI/a-IGZO transparent heterojunctions

〇Takahiro Kondo¹, Yuumi Kondo¹, Yoshihiko Ninomiya¹, Naoomi Yamada¹ (1.Chubu Univ.)

4:30 PM - 4:45 PM

▼ [20p-234A-12] Effect of Atomic Layer Deposition Temperature on the Electrical Characteristics of Al₂O₃-passivated Amorphous InGaZnO Thin-Film Transistors

〇(M2)Dianne Cabrejas Corsino¹, Juan Paolo Bermundo¹, Mami Fujii¹, Kiyoshi Takahashi², Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.Nara Institute of Science and Technology, 2.Nippon Aluminum Alkyls, Ltd.)

5:00 PM - 5:15 PM

[20p-234A-13] Low-temperature Process for IGZO TFT with Ar+O₂+H₂ sputtered IGZO channel

〇Mamoru Furuta¹, S G Mahadhi Aman¹, Yusaku Magari¹, Kenta Shimpo¹, Daichi Koretomo¹ (1.Kochi Univ. of Tech.)

5:15 PM - 5:30 PM

△ [20p-234A-14] Drastic improvement of Schottky diode properties by Ar+O₂+H₂ sputtered InGaZnO

〇(DC)Yusaku Magari¹, Kenichiro Hamada¹, Kentaro Masuda¹, Mamoru Furuta^1,2 (1.Kochi Univ. of Tech., 2.Center for Nanotech.)

5:30 PM - 5:45 PM

△ [20p-234A-15] Evaluation of the high mobility Oxide TFTs by low temperature anneal

〇Tsubasa Moritsuka¹, Sumiko Fujisaki¹, Hiroyuki Uchiyama² (1.Hitachi Ltd., 2.Hitachi Metals Ltd.)

5:45 PM - 6:00 PM

△ [20p-234A-16] Reliability of In_1-xSi_xO_1-yC_y thin-film transistors with an Al₂O₃ passivation layer under NBIS

〇(D)Kazunori Kurishima^1,2,3, Toshihide Nabatame², Takashi Onaya^1,2,3, Kazuhito Tsukagoshi², Akihiko Ohi², Naoki Ikeda², Takahiro Nagata², Atsushi Ogura¹ (1.Meiji Univ., 2.NIMS, 3.JSPS DC)

6:00 PM - 6:15 PM

▼ [20p-234A-17] Highly Reliable Low Temperature (180℃) Solution Processed Passivation for Amorphous Solution Processed In-Zn-O Thin-Film Transistors

〇(M1)Aimi Syairah Safaruddin¹, Juan Paolo Bermundo¹, Naofumi Yoshida², Toshiaki Nonaka², Mami Fujii¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.Nara Institute of Science and Technology, 2.Merck Performance Materials Ltd.)

6:15 PM - 6:30 PM

▼ [20p-234A-18] Effects of Wet O₂ Annealing on the Transfer Characteristics of Solution Processed Amorphous Indium Zinc Oxide Thin-film Transistors

〇(DC)Michael Paul Aquisay Jallorina¹, Juan Paolo Bermundo¹, Mami Fujii¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST)

Sessions

21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19a-224A-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19p-224A-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▲ [19p-224A-1] [JSAP Paper Award Speech] Delta-doped β-gallium oxide field-effect transistor

[20a-234A-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-234A-1~18] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [20p-234A-2] Observation of emission spots in HVPE (001) β-Ga2O3 Schottky barrier diodes

△ [20p-234A-4] Heteroepitaxial Growth of ε-Ga2O3 Films on Sapphire and GaN templates by HVPE.

△ [20p-234A-5] Examination of film formation factor of solid phase epitaxy in room temperature of amorphous Ga2O3 by excimer laser annealing

△ [20p-234A-6] Fabrication of Cu doped p type AlOx thin films by drop photochemical deposition

△ [20p-234A-7] Preparation of SiO2/HfO2 dielectric distributed Bragg reflectors using the reactive helicon-wave-excited-plasma sputtering method

▼ [20p-234A-8] A perverse transparent oxide semiconductor, La:BaSnO3

△ [20p-234A-9] Time-resolved photoluminescence study of process-induced defects in ZnO

△ [20p-234A-10] Fabrication and Optimization of Zinc Oxide Thin Film Growth using Angle-Controlled Magnetron Sputtering

△ [20p-234A-11] Self-powered UV photodetectors based on CuI/a-IGZO transparent heterojunctions

▼ [20p-234A-12] Effect of Atomic Layer Deposition Temperature on the Electrical Characteristics of Al2O3-passivated Amorphous InGaZnO Thin-Film Transistors

△ [20p-234A-14] Drastic improvement of Schottky diode properties by Ar+O2+H2 sputtered InGaZnO

△ [20p-234A-15] Evaluation of the high mobility Oxide TFTs by low temperature anneal

△ [20p-234A-16] Reliability of In1-xSixO1-yCy thin-film transistors with an Al2O3 passivation layer under NBIS

▼ [20p-234A-17] Highly Reliable Low Temperature (180℃) Solution Processed Passivation for Amorphous Solution Processed In-Zn-O Thin-Film Transistors

▼ [20p-234A-18] Effects of Wet O2 Annealing on the Transfer Characteristics of Solution Processed Amorphous Indium Zinc Oxide Thin-film Transistors

Authentication

△ [20p-234A-2] Observation of emission spots in HVPE (001) β-Ga₂O₃Schottky barrier diodes

△ [20p-234A-4] Heteroepitaxial Growth of ε-Ga₂O₃Films on Sapphire and GaN templates by HVPE.

△ [20p-234A-5] Examination of film formation factor of solid phase epitaxy in room temperature of amorphous Ga₂O₃ by excimer laser annealing

△ [20p-234A-6] Fabrication of Cu doped p type AlO_x thin films by drop photochemical deposition

△ [20p-234A-7] Preparation of SiO₂/HfO₂ dielectric distributed Bragg reflectors using the reactive helicon-wave-excited-plasma sputtering method

▼ [20p-234A-8] A perverse transparent oxide semiconductor, La:BaSnO₃

▼ [20p-234A-12] Effect of Atomic Layer Deposition Temperature on the Electrical Characteristics of Al₂O₃-passivated Amorphous InGaZnO Thin-Film Transistors

△ [20p-234A-14] Drastic improvement of Schottky diode properties by Ar+O₂+H₂ sputtered InGaZnO

△ [20p-234A-16] Reliability of In_1-xSi_xO_1-yC_y thin-film transistors with an Al₂O₃ passivation layer under NBIS

▼ [20p-234A-18] Effects of Wet O₂ Annealing on the Transfer Characteristics of Solution Processed Amorphous Indium Zinc Oxide Thin-film Transistors