The 79th JSAP Autumn Meeting, 2018

Presentation information

Oral presentation

21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20a-234A-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Sep 20, 2018 9:00 AM - 12:00 PM 234A (234-1)

Takashi Yasuda(Ishinomaki Senshu Univ.)

9:30 AM - 9:45 AM

[20a-234A-3] Electrical and optical properties of ATO thin films fabricated by mist CVD

〇(M1)Mariko Ueda1, Li Liu1, Shota Sato1, Giang Dang2, Toshiyuki Kawaharamura1,2, Fujita Shizuo3, Hiroyuki Orita4, Takahiro Hiramatsu4 (1.School of Intelligent. Mech. Sys. Eng., Kochi Univ. of Tech., 2.Res.Inst., Kochi Univ. of Tech., 3.Kyoto Univ., 4.Toshiba Mitsubishi-Electric Industrial Systems)

Keywords:mist CVD, Transparent Conducting Oxides, Antimony doped Tin Oxide