[20a-234A-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20a-234A-2] Anomalous carrier transport of tin-doped In₂O₃ thin films irradiated with negative oxygen ions

〇Yutaka Furubayashi¹, Hisashi Kitami^1,2, Toshiyuki Sakemi², Kimio Kinoshita², Makoto Maehara², Hisao Makino¹, Tetsuya Yamamoto¹ (1.Kochi Univ. Tech., 2.Sumitomo Heavy Industries, Ltd.)

Keywords:Indium oxide, electrical transport properties, grain boundaries

Sn-doped In₂O₃ (ITO) is widely applied to transparent conducting films because of its high optical transparency and high electrical conductivity. Normally, as a model of ITO polycrystalline films for discussing their electrical transport, it would be taken into account that conducting crystal grains are separated by barriers (grain boundaries) with finite distances In this case, the Hall mobility (µ_H) should be smaller than the optical mobility (µ_opt). On the other hand, we found the conditions with which ITO films irradiated by oxygen negative ions (O^-) had a relationship of µ_H > µ_opt . Because µ_H contains the effects on the carrier transport by grain boundaries, we have to discuss the possibilities that electrical paths exist also in grain boundaries.