The 79th JSAP Autumn Meeting, 2018

Presentation information

Oral presentation

21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20a-234A-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Sep 20, 2018 9:00 AM - 12:00 PM 234A (234-1)

Takashi Yasuda(Ishinomaki Senshu Univ.)

11:15 AM - 11:30 AM

[20a-234A-9] The origin and properties of SRH-type nonradiative recombination centers in ZnO

Shigefusa Chichibu1, Kazunobu Kojima1, Kazuto Koike2, Mitsuaki Yano2, Shun-ichi Gonda3, Shoji Ishibashi4, Akira Uedono5 (1.IMRAM, Tohoku Univ., 2.Osaka Inst. Tech., 3.ISIR, Osaka Univ, 4.CD-FMat, AIST, 5.Univ. of Tsukuba)

Keywords:Zinc Oxide, Time-resolved Photoluminescence, Positron Annihilation

We will discuss the origin and properties of NRCs in ZnO