[19a-224A-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19a-224A-7] Fabrication of GaON Thin Films Using Mist-CVD

〇Masayuki Nakamura¹, Takayuki Kobayashi¹, Toshiaki Tatsuta¹, Shin-ichi Motoyama¹ (1.Samco Inc.)

Keywords:mist CVD, semiconductor

Mist-CVD is the deposition method using mist of the solution which contains raw materials. The mist is fabricated using ultrasonic vibrator and carried to the reactor. In the reactor, the mist is evaporated on the heated substrate and the thin film is deposited. Although various films have been deposited using mist-CVD, most of them are oxides. In this study, we tried to deposit GaON thin films using GaCl₃ and melamine.