[19a-224A-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19a-224A-8] Halide Vapor Phase Epitaxy of Single-Crystal c-In₂O₃(111) Using c-Plane Sapphire Off Substrates

〇Kenta Nagai¹, Hidetoshi Nakahata¹, Keita Konishi¹, Plamen P. Paskov², Bo Monemar^2,3, Yoshinao Kumagai^1,3 (1.Tokyo Univ. of Agri. & Tech., 2.Linkoping Univ., 3.TUAT GIR)

Keywords:crystal-growth, halide vapor phase epitaxy, indium oxide