[19a-233-1~11] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[19a-233-10] Polarity Change of Ge-on-Insulator Fabricated by using Smart-Cut Technique

〇Kohei Nakae¹, Feida Xue¹, Keisuke Yamamoto¹, Dong Wang¹, Hiroshi Nakashima², Miao Zhang³, Zhongying Xue³, Zengfeng Di³ (1.I-EGGS, Kyushu Univ., 2.GIC, Kyushu Univ., 3.SIMIT, Chinese Academy of Sciences)

Keywords:semiconductor, ge-on-insulator, Smart-Cut