[19a-234B-1~9] 6.4 Thin films and New materials

[19a-234B-8] High-rate sputter deposition of tantalum oxide thin films using water vapor as a reactive gas

〇Yusuke Ito¹, Yoshio Abe¹, Midori Kawamura¹, Kyung Ho Kim¹, Takayuki Kiba¹ (1.Kitami Inst. Tech.)

Keywords:tantalum oxide, reactive sputtering, proton conductive solid electrolyte

Application of Ta₂O₅ to proton conductive solid electrolyte is under study, but there is a problem that Ta₂O₅ thin film prepared by sputtering method has a slow deposition rate. In this study, the application of water-vapor sputtering method was investigated for the purpose of deposition of Ta₂O₅ thin film at high deposition rates. As a sputtering gas, a mixed gas of Ar and water vapor was used, and water vapor was sprayed directly onto the substrate surface. When the substrate temperature was room temperature, the deposition rate was as slow as 2.5 nm / min however it increased to 50 nm / min at -170 ℃. Based on the above results, it is considered that water-vapor sputtering is promising as a high-rate deposition technology of Ta₂O₅ thin film.