Dissociation and Association Behavior of Hydrogen in Carbon Cluster Implanted Region during Device Fabrication Process

Ryosuke Okuyama; Ayumi Masada; Koji Kobayashi; Satoshi Shigematsu; Ryo Hirose; Takeshi Kadono; Yoshihiro Koga; Hidehiko Okuda; Kazunari Kurita

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[19p-131-1~15] 15.7 Crystal characterization, impurities and crystal defects

Wed. Sep 19, 2018 1:30 PM - 5:45 PM 131 (131+132)

Kentaro Kutsukake(Nagoya Univ.), Toshinori Taishi(Shinshu Univ.), Yasuo Shimizu(Tohoku Univ.)

4:00 PM - 4:15 PM

[19p-131-10] Dissociation and Association Behavior of Hydrogen in Carbon Cluster Implanted Region during Device Fabrication Process

〇Ryosuke Okuyama¹, Ayumi Masada¹, Koji Kobayashi¹, Satoshi Shigematsu¹, Ryo Hirose¹, Takeshi Kadono¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO)

Keywords:Hydrogen, carbon cluster

The dissociation behavior of hydrogen in the projection range of a C₃H₅ cluster was investigated for high-performance complementary metal-oxide-semiconductor (CMOS) image sensors. On the other hand, plasma CVD layer contains a high concentration of hydrogen during device process. In this study, the association and dissociation behavior of hydrogen in the implanted region of C₃H₅ during the device process were clarified.