Measurement of depth profile for hydrogen in Silicon Substrate using Deep Level Transient Spectroscopy Method. ~Behavior of hydrogen in wet process~

Takafumi Negi; Kazutaka Eriguchi; Noritomo Mitsugi; Shuichi Samata

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[19p-131-1~15] 15.7 Crystal characterization, impurities and crystal defects

Wed. Sep 19, 2018 1:30 PM - 5:45 PM 131 (131+132)

Kentaro Kutsukake(Nagoya Univ.), Toshinori Taishi(Shinshu Univ.), Yasuo Shimizu(Tohoku Univ.)

4:45 PM - 5:00 PM

[19p-131-12] Measurement of depth profile for hydrogen in Silicon Substrate using Deep Level Transient Spectroscopy Method. ~Behavior of hydrogen in wet process~

〇Takafumi Negi¹, Kazutaka Eriguchi¹, Noritomo Mitsugi¹, Shuichi Samata¹ (1.SUMCO)

Keywords:DLTS, Silicon substrate, Carbon in silicon

It is important for power device to control carbon concentration in silicon, which affects device characteristics. We developed Chemical Activation DLTS (C.A.-DLTS) method which measured traces of carbon concentration in silicon using CH defects. In this study, we studied about the influence of concentration ratio of HNO₃/(HNO₃ + HF) and depth profile of CH defects. We estimated diffusivity in silicon at R.T.