The 79th JSAP Autumn Meeting, 2018

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15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[19p-131-1~15] 15.7 Crystal characterization, impurities and crystal defects

Wed. Sep 19, 2018 1:30 PM - 5:45 PM 131 (131+132)

Kentaro Kutsukake(Nagoya Univ.), Toshinori Taishi(Shinshu Univ.), Yasuo Shimizu(Tohoku Univ.)

5:15 PM - 5:30 PM

[19p-131-14] Measurement of carbon concentration in silicon crystal
(XI) Low temperature measurement down to 1013cm-3 by IR

〇Naohisa Inoue1,2, Shuichi Kawamata2 (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

Keywords:silicon crystal, carbon concentration measurement, infrared absorption

Low temperature infrared absorption measurement of carbon concentration in silicon crystal was examined. A reference sample with substitutional carbon below 10^14 atoms/cm^3 was used. Interfering phonon fractional absorption bands were examined and removed by the Lorentzian fitting. A machine dependent calibration constant was determined by the measurement of the standard sample set.