The 79th JSAP Autumn Meeting, 2018

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15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[19p-131-1~15] 15.7 Crystal characterization, impurities and crystal defects

Wed. Sep 19, 2018 1:30 PM - 5:45 PM 131 (131+132)

Kentaro Kutsukake(Nagoya Univ.), Toshinori Taishi(Shinshu Univ.), Yasuo Shimizu(Tohoku Univ.)

2:30 PM - 2:45 PM

[19p-131-5] Self-interstitial Concentration Dependence of Thermal Donor Formation in Si Crystal

〇Kazuhisa Torigoe1, Toshiaki Ono1 (1.SUMCO)

Keywords:silicon, thermal donor, point defect

The formation of thermal donors in silicon crystals is known to be enhanced due to excess self-interstitials; however, the relation between self-interstitial concentration and thermal donor concentration is not reported. In this work, the dependence of thermal donor concentration on self-interstitial concentration is revealed using silicon wafers injected self-interstitials by rapid thermal anneal in oxygen ambient.