The 79th JSAP Autumn Meeting, 2018

Presentation information

Oral presentation

13 Semiconductors » 13.9 Compound solar cells

[19p-136-1~8] 13.9 Compound solar cells

Wed. Sep 19, 2018 1:45 PM - 3:45 PM 136 (3F_Lobby)

Hisashi Miyazaki(National Defense Academy)

2:00 PM - 2:15 PM

[19p-136-2] The Interface Structure and the Carrier Transport at the Junction between ZnSnP2 Absorber and Cu Back Electrode

Taro Kuwano1, Ryoji Katsube1, Yoshitaro Nose1 (1.Kyoto Univ.)

Keywords:ZnSnP2, Interface, photovoltaics

ZnSnP2 (ZTP), a II-IV-V2 chalcopyrite semiconductor, has suitable optical properties for thin filim solar cells. It was reported that there is a close relation between the interface structure and carrier transport behavior at the junction between ZTP absorber and Cu back electrode in the ZTP solar cell with the efficiency of about 3.4 %. In this study, we systematically investigated the ZTP/Cu interface and revealed that forming of Cu3P at the interface affects the change from Schottky to Ohmic junction.