〇(B)Myeongok Kim¹, Nazmul Ahsan², Zacharie Jehl Li Kao², Hiroya Matsubayashi³, Kalainathan Sivaperuman⁴, Yoshitaka Okada^2,3 (1.Col. Arts and Sci. UTokyo, 2.RCAST UTokyo, 3.Elec. Eng. UTokyo, 4.VIT University)

10:15 AM - 10:30 AM

[19a-136-6] First-principles study of (Cu,Li)GaS₂ system

〇Hironori Nishihara¹, Tsuyoshi Maeda¹, Takahiro Wada¹ (1.Ryukoku University)

10:45 AM - 11:00 AM

△ [19a-136-7] Control of S/(S+Se) ratio of Cu₂ZnSn(S,Se)₄ thin films by the group VI vapor pressures and heating rate during sintering

〇(D)Kanta Sugimoto¹, Kazuyoshi Nakada¹, Akira Yamada¹ (1.Tokyo Tech.)

11:00 AM - 11:15 AM

[19a-136-8] Preparation of Cu₂Sn_1-xGe_xS₃ light-absorber layer utilizing diluted H₂S gas

〇Jun Kobayshi¹, Myo Than Htay¹, Noritaka Momose², Kentaro Ito¹, Yoshio Hashimoto¹ (1.Shinshu Univ., 2.NIT, Nagano Coll.)

11:15 AM - 11:30 AM

△ [19a-136-9] Growth and electrical characterization of SnS bulk crystals

〇(M1)Tomoki Takemura¹, Katsube Ryoji¹, Nose Yoshitaro¹ (1.Kyoto Univ.)

11:30 AM - 11:45 AM

[19a-136-10] Growth of SnS thin films by vacuum evaporation using Sn-SnS sources

〇(M1)Tomoki Takemura¹, Katsube Ryoji¹, Nose Yoshitaro¹ (1.Kyoto Univ.)

11:45 AM - 12:00 PM

▲ [19a-136-11] Controlling carrier concentration of SnS by Sb doping

〇(M2)Ashenafi Abadi Elyas¹, Myo Than Htay^1,2, Yoshio Hashimoto^1,2, Kentaro Ito¹, Noritaka Momose³ (1.Shinshu Univ., 2.ICST, Shinshu Univ., 3.NIT, Nagano coll.)

12:00 PM - 12:15 PM

[19a-136-12] Effects of Cu Doping on CdTe Thin-Film Solar Cells in Substrate Configuration

〇Tamotsu Okamoto¹, Yusuke Hayashi¹, Daichi Watanabe¹, Ayuki Murata¹ (1.KIT, Kisarazu Col.)

Oral presentation

[19p-136-1~8] 13.9 Compound solar cells

Wed. Sep 19, 2018 1:45 PM - 3:45 PM 136 (3Ｆ_Lobby)

Hisashi Miyazaki(National Defense Academy)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

△ [19p-136-1] Exploration of IIA-Zn-P compounds as buffer layers in thin film photovoltaics

〇(PC)Ryoji Katsube¹, Yoshitaro Nose¹ (1.Kyoto Univ.)

2:00 PM - 2:15 PM

[19p-136-2] The Interface Structure and the Carrier Transport at the Junction between ZnSnP₂ Absorber and Cu Back Electrode

〇Taro Kuwano¹, Ryoji Katsube¹, Yoshitaro Nose¹ (1.Kyoto Univ.)

2:15 PM - 2:30 PM

[19p-136-3] Formation of InP film with high flatness via controlling the wettability of the precursors

〇Yuming Yang¹, Ryoji Katsube¹, Yoshitaro Nose¹ (1.Kyoto Univ.)

2:30 PM - 2:45 PM

[19p-136-4] High mobility p- and n-type Cu₃N by direct nitriding and theoretical calculation

〇Kosuke Matsuzaki¹, Harada Kou², Yu Kumagai¹, Koshiya Shogo³, Koji Kimoto³, Shigenori Ueda³, Masato Sasase¹, Akihiro Maeda², Tomofumi Susaki^1,2, Masaaki Kitano¹, Fumiyasu Oba^1,2,3, Hideo Hosono^1,2 (1.Tokyo Tech MCES, 2.Tokyo Tech MSL, 3.NIMS)

2:45 PM - 3:00 PM

[19p-136-5] Fabrication of p-NiO/n-ZnO transparent solar cells by electrochemical deposition

〇(M2)Miki Koyama¹, Masaya Ichimura¹ (1.NITech)

3:00 PM - 3:15 PM

[19p-136-6] Fabrication of FeS_xO_yFilms by 3-Step Pulse Electrodeposition with Tartaric acid and application to pnHeterojunctions

〇(M2)Wen Ji¹, Masaya Ichimura¹ (1.Nagoya Inst. Tech)

3:15 PM - 3:30 PM

[19p-136-7] Evaluation of optical properties of BiI₃ thin film

〇Arata Tsuzuki¹, Yuika Kusakabe¹, ANISSA ADIWENA PUTRI¹, Shinya Kato¹, Naoki Kishi¹, Tetsuo Soga¹ (1.Nagoya Inst)

3:30 PM - 3:45 PM

[19p-136-8] First-principles Study of Doping Property of Lead Halide Perovskites

〇Satoshi Akai¹, Takashi Nakayama¹ (1.Chiba Univ.)

Oral presentation

[20a-136-1~10] 13.9 Compound solar cells

Thu. Sep 20, 2018 9:30 AM - 12:00 PM 136 (3Ｆ_Lobby)

Syuhei Yagi(Saitama Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[20a-136-1] Current-voltage characteristic in InGaP-based InP quantum dot solar cells

〇(PC)Taketo Aihara¹, Takashi Nakamoto², Takeshi Tayagaki¹, Yoshinobu Okano², Takeyoshi Sugaya¹ (1.AIST, 2.Tokyo City Univ.)

9:45 AM - 10:00 AM

[20a-136-2] Photoluminescence properties of type-II InAs/GaAsSb QD layers for QD solar cell applications

〇Ryo Sugiyama¹, Sho Tatsugi¹, Koichi Yamaguchi¹ (1.Univ. of Electro-Comm.)

10:00 AM - 10:15 AM

[20a-136-3] Sun-concentration properties of QD solar cells with in-plane ultrahigh-density InAs QDs

〇(M2)Ryosuke Suzuki¹, Katsuyoshi Sakamoto¹, Tomah Sogabe¹, Koichi Yamaguchi¹ (1.UEC)

10:15 AM - 10:30 AM

[20a-136-4] Photoluminescence Spectroscopy on InAs Quantum Dot Solar Cells under Infrared Light

〇Ryo Tamaki¹, Yasushi Shoji^1,2, Yoshitaka Okada¹ (1.RCAST, The Univ. of Tokyo, 2.AIST)

10:30 AM - 10:45 AM

[20a-136-5] Spectral sensitivity of conversion efficiency of two-step photon up-conversion solar cells

〇Yukihiro Harada¹, Tetsuhiro Matsuo¹, Shigeo Asahi¹, Takashi Kita¹ (1.Kobe Univ.)

10:45 AM - 11:00 AM

[20a-136-6] Effect of Excitation Intensity on Photon Up-Conversion in Two-Step Photon Up-Conversion Solar Cells

〇Shigeo Asahi¹, Takashi Kita¹ (1.Kobe Univ.)

11:00 AM - 11:15 AM

[20a-136-7] Temperature characteristics and thermoelectric effect in heat recovery (HERC) solar cell

〇Kenji KAMIDE¹, Toshimitsu Mochizuki¹, Hidefumi Akiyama^2,3, Hidetaka Takato¹ (1.AIST, 2.ISSP, Univ. of Tokyo, 3.OPERANDO-OIL)

11:15 AM - 11:30 AM

[20a-136-8] Hot-carrier current extraction characteristics in InAs/GaAs quantum-dot superlattice solar cells

〇Naoto Iwata¹, Daiki Watanabe¹, Yukihiro Harada¹, Shigeo Asahi¹, Takashi Kita¹ (1.Kobe Univ.)

11:30 AM - 11:45 AM

[20a-136-9] Design of Quantum Well Solar Cells Using an Effective Mobility Model

〇Kasidit Toprasertpong¹, Yoshiaki Nakano¹, Masakazu Sugiyama^1,2 (1.Univ. Tokyo, 2.RCAST)

11:45 AM - 12:00 PM

△ [20a-136-10] Comparison of Effective Carrier Mobility between Wire on Well and Multiple Quantum Well by Time of Flight Measurement

〇Meita Asami¹, Kasidit Toprasertpong¹, Kentaroh Watanabe², Yoshiaki Nakano¹, Yoshitaka Okada^1,2, Masakazu Sugiyama^1,2 (1.Tokyo Univ., 2.RCAST)

Oral presentation

[20p-136-1~11] 13.9 Compound solar cells

Thu. Sep 20, 2018 1:30 PM - 4:15 PM 136 (3Ｆ_Lobby)

Kentaroh Watanabe(Univ. of Tokyo)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

△ [20p-136-1] HAXPES measurements of GaAs thin film//ITO interfaces for GaAs//ITO/Si junctions.

〇(M2)Tomoya Hara¹, Jianbo Liang¹, Kenji Araki², Takefumi Kamioka², Hassanet Sodabanlu³, Kentaro Watanabe³, Masakazu Sugiyama³, Naoteru Shigekawa¹ (1.Osaka City Univ., 2.Toyota Technol Inst., 3.Univ. of Tokyo)

1:45 PM - 2:00 PM

△ [20p-136-2] Fabrication of GaAs/Si double junctions by surface activated bonding and etching of sacrificial layers

〇(M1)Ryo Kozono¹, Sanji Yoon¹, Jianbo Liang¹, Naoteru Shigekawa¹ (1.Osaka City Univ.)

2:00 PM - 2:15 PM

▼ [20p-136-3] Transport efficiency imaging in multi-junction solar cells by luminescence analysis

〇(D)Xu Hao¹, Amaury Delamarre¹, Bernice Mae F. Yu Jeco¹, Kentaroh Watanabe¹, Yoshitaka Okada¹, Jean-Francois Guillemoles², Yoshiaki Nakano¹, Masakazu Sugiyama¹ (1.Univ. of Tokyo, 2.UMR CNRS)

2:15 PM - 2:30 PM

△ [20p-136-4] Investigation of GaAs Multi-stacked Structure in Multi-junction Solar Cell

〇(M1)Takashi Nakamoto¹, Kikuo Makita², Takeshi Tayagaki², Ryuji Oshima², Taketo Aihara², Yoshinobu Okano¹, Takeyoshi Sugaya² (1.Tokyo City Univ., 2.AIST)

2:30 PM - 2:45 PM

△ [20p-136-5] High speed growth of InGaP solar cells fabricated by hydride vapor phase epitaxy

〇Yasushi Shoji¹, Ryuji Oshima¹, Kikuo Makita¹, Akinori Ubukata², Takeyoshi Sugaya¹ (1.AIST, 2.Taiyo Nippon Sanso)

2:45 PM - 3:00 PM

[20p-136-6] Influence of scattered light on conversion efficiency of multi-junction solar cells under real concentrated sunlight

〇(B)Shinya Honda¹, Yoshihito Imamatsu¹, Hideo Teramoto¹, Yuki Nakamura¹, Ryota Jomen¹, Yoshiaki Ajima¹, Tomoya Kamata¹, Shu Takahashi¹, Naoki Saito¹, Shunsuke Hayashi¹, Yuichi Mikami¹, Masayoshi Kawahara¹, Shogo Murayama¹, Yasuyuki Ota², Pan Dai³, Shulong Lu³, Shiro Uchida¹ (1.Chiba Inst., 2.Miyazaki Univ. OPTT, 3.Suzhou Inst.)

3:00 PM - 3:15 PM

[20p-136-7] Analysis of optical and recombination losses in a high-efficiency InGaP/GaAs solar cells by quantum efficiency calculation

〇Masayuki Kozawa¹, Hiroyuki Fujiwara¹ (1.Gifu Univ.)

3:15 PM - 3:30 PM

[20p-136-8] Evaluation on hetero-interfaces properties in GaAs solar cells grown by HVPE

〇Ryuji Oshima¹, Yasushi Shoji¹, Kikuo Makita¹, Akinori Ubukata², Takeyoshi Sugaya¹ (1.AIST, 2.TNSC)

3:30 PM - 3:45 PM

▲ [20p-136-9] MOVPE growth of GaAs-based tunneling diode for multiple junction solar cells

〇Hassanet Sodabanlu¹, Kentaroh Watanabe¹, Masakazu Sugiyama^1,2, Yoshiaki Nakano² (1.RCAST, Univ. of Tokyo, 2.School of Engineering, Univ. of Tokyo)

3:45 PM - 4:00 PM

[20p-136-10] Study of GaInNAsSb absorber thickness in inverted lattice-matched 3J solar cells

〇Naoya Miyashita¹, Yilun He¹, Yoshitaka Okada¹ (1.RCAST, Univ. of Tokyo)

4:00 PM - 4:15 PM

[20p-136-11] Three-terminal smart stacked multi-junction solar cells

〇Takeshi Tayagaki¹, Kikuo Makita¹, Ryuji Oshima¹, Hidenori Mizuno¹, Masaaki Baba², Noboru Yamada², Takeyoshi Sugaya¹ (1.AIST, 2.Nagaoka Univ. Tech.)

Poster presentation

[19p-PB5-1~14] 13.9 Compound solar cells

Wed. Sep 19, 2018 4:00 PM - 6:00 PM PB (Shirotori Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

4:00 PM - 6:00 PM

[19p-PB5-1] Fabrication and evaluation of Ag₈SnS₆ photoelectrode by fine particle coating technique

〇(M1)GIAPHUC LENGUYEN¹, Kunihiko Tanaka¹ (1.Nagaoka Univ. of Tech.)

4:00 PM - 6:00 PM

[19p-PB5-2] Characterization of (Na_xCu_1-x)_ySnS₃ by photoluminescence measurements

〇Takahiro Maeda¹, Hideaki Araki², Kunihiko Tanaka¹ (1.Nagaoka Univ. Tech., 2.NIT, Nagaoka College)

4:00 PM - 6:00 PM

[19p-PB5-3] Post-annealing effect of Cu₂SnS₃ thin films fabricated by sulfurization

〇Mitsuki Nakashima¹, Yuki Hagiwara¹, Toshiyuki Yamaguchi¹, Junji Sasano², Masanobu Izaki² (1.N. I. T. Wakayama College, 2.Toyohashi Univ. of Tech.)

4:00 PM - 6:00 PM

[19p-PB5-4] Cu₂ZnSn(S,Se)₄ thin film solar cells fabricated by sulfurization using Cu₂ZnSnSe₄ compound with KF addition

〇Mitsuki Nakashima¹, Kazuki Uenishi¹, Hiroyuki Naoi¹, Toshiyuki Yamaguchi¹, Hideaki Araki², Hironori Katagiri², Junji Sasano³, Masanobu Izaki³ (1.N. I. T. Wakayama College, 2.N. I. T. Nagaoka College, 3.Toyohashi Univ. of Tech.)

4:00 PM - 6:00 PM

[19p-PB5-5] Evaluation of exponential tail in optical absorption spectrum for Cu₂ZnSn(S,Se)₄

〇AbdRahman Binti NurSyazwana¹, Tomoki Kawata¹, Yuta Osada¹, Shigeru Yamada¹, Takashi Itoh¹, Shuichi Nonomura¹, Kanta Sugimoto², Akira Yamada² (1.Gifu Univ., 2.Tokyo Tech.)

4:00 PM - 6:00 PM

[19p-PB5-6] Nanostructure evaluation of CZTS-film surface by tip-enhanced Raman scattering

〇(DC)RAUL RAMOS PAUCAR¹, KAZUKI WAKITA¹, YONG-GU SHIM², NAZIM MAMEDOV³ (1.Chiba Inst. of Tech., 2.Osaka Pref. Univ., 3.Inst. of Phys. Az. Nat. Acad.)

4:00 PM - 6:00 PM

[19p-PB5-7] Composition-ratio control of CZTS target for PLD method

〇Yuta Goto¹, Masahiro Kotani¹, Yong-Gu Shim², Kazuki Wakita¹ (1.Chiba Inst., 2.Osaka Pref. Univ.)

4:00 PM - 6:00 PM

[19p-PB5-8] Effect of starting temperature of sulfurization on properties of Cu₂ZnSnS₄ films fabricated by using precursor films formed by dipping-pyrolysis process and hydrogen sulfide

〇Naoki Uno¹, Masahiro Tahashi¹, Makoto Takahashi¹, Shigeyuki Nakamura², Takashi Harada³, Shigeru Ikeda⁴, Kenji Yoshino⁵, Hideo Goto¹ (1.Chubu Univ., 2.Tsuyama College, 3.Oosaka Univ., 4.Konan Univ., 5.Miyazaki Univ.)

4:00 PM - 6:00 PM

[19p-PB5-9] Effects of annealing conditions on formation of Cu₂ZnSnS₄ using rapid thermal annealing

〇Keita Yoshikawa¹, Tomohiro Shimizu¹, Syukichi Tanaka², Takeshi Ito¹, Shozo Shingubara¹ (1.Kansai Univ., 2.NICT)

4:00 PM - 6:00 PM

[19p-PB5-10] Fabrication of Cu₂Zn(Sn_1-xGe_x)S₄ film using mixed dispersion of two nanoparticles ２

〇Kojiro Matsumoto¹, Tomohiro Takase¹, Yasushi Hamanaka¹ (1.Nagoya Inst. Tech.)

4:00 PM - 6:00 PM

△ [19p-PB5-11] Deposition of CuGaS₂ thin films by co-sputtering

〇(M2)Hiroya Matsubayashi¹, Nazmul Ahsan², Kim Myeongok³, Kalainathan Sivaperuman⁴, Yoshitaka Okada^1,2 (1.Elec. Eng. UTokyo, 2.RCAST UTokyo, 3.Col. Arts and Sci. UTokyo, 4.VIT University)

4:00 PM - 6:00 PM

[19p-PB5-12] MBE Growth and Characterization of n-ZnS/p-CuGaS₂ Junctions

〇Hiroto Yadani¹, Hayao Morisawa¹, Takeshi Oomori¹, Kento Mori¹, Tsuyoshi Takamura¹, Kazuaki Akaiwa¹, Tomoki Abe¹, Kunio Ichino¹ (1.Tottori Univ.)

4:00 PM - 6:00 PM

[19p-PB5-13] Oxygen concentration dependence of photovoltaic properties of
Cl-doped ZnTeO Intermediate band solar cells

〇Takeo Izumi¹, Shuji Tsutsumi¹, Matsuo Kento¹, Tooru Tanaka¹, Katsuhiko Saito¹, Qixin Guo¹ (1.Saga Univ.)

4:00 PM - 6:00 PM

[19p-PB5-14] Relation between degradation properties and power generation amount by indoor measurement of compound thin film photovoltaics

〇Sungwoo Choi¹, Yasuo Chiba¹, Ritsuko Sato¹, Tetsuyuki Ishii², Atsushi Masuda¹ (1.AIST, 2.CRIEPI)

Sessions

13 Semiconductors » 13.9 Compound solar cells

[19a-136-1~12] 13.9 Compound solar cells

△ [19a-136-4] Development of p-type CuI for 2 terminal tandem solar cells

△ [19a-136-5] Dependence of Electrical Contact between CuGaS2 and Mo Thin Films on Sputtering Conditions

△ [19a-136-7] Control of S/(S+Se) ratio of Cu2ZnSn(S,Se)4 thin films by the group VI vapor pressures and heating rate during sintering

△ [19a-136-9] Growth and electrical characterization of SnS bulk crystals

▲ [19a-136-11] Controlling carrier concentration of SnS by Sb doping

[19p-136-1~8] 13.9 Compound solar cells

△ [19p-136-1] Exploration of IIA-Zn-P compounds as buffer layers in thin film photovoltaics

[20a-136-1~10] 13.9 Compound solar cells

△ [20a-136-10] Comparison of Effective Carrier Mobility between Wire on Well and Multiple Quantum Well by Time of Flight Measurement

[20p-136-1~11] 13.9 Compound solar cells

△ [20p-136-1] HAXPES measurements of GaAs thin film//ITO interfaces for GaAs//ITO/Si junctions.

△ [20p-136-2] Fabrication of GaAs/Si double junctions by surface activated bonding and etching of sacrificial layers

▼ [20p-136-3] Transport efficiency imaging in multi-junction solar cells by luminescence analysis

△ [20p-136-4] Investigation of GaAs Multi-stacked Structure in Multi-junction Solar Cell

△ [20p-136-5] High speed growth of InGaP solar cells fabricated by hydride vapor phase epitaxy

▲ [20p-136-9] MOVPE growth of GaAs-based tunneling diode for multiple junction solar cells

[19p-PB5-1~14] 13.9 Compound solar cells

△ [19p-PB5-11] Deposition of CuGaS2 thin films by co-sputtering

Authentication

△ [19a-136-5] Dependence of Electrical Contact between CuGaS₂ and Mo Thin Films on Sputtering Conditions

△ [19a-136-7] Control of S/(S+Se) ratio of Cu₂ZnSn(S,Se)₄ thin films by the group VI vapor pressures and heating rate during sintering

△ [19p-PB5-11] Deposition of CuGaS₂ thin films by co-sputtering