The 79th JSAP Autumn Meeting, 2018

Presentation information

Poster presentation

13 Semiconductors » 13.9 Compound solar cells

[19p-PB5-1~14] 13.9 Compound solar cells

Wed. Sep 19, 2018 4:00 PM - 6:00 PM PB (Shirotori Hall)

4:00 PM - 6:00 PM

[19p-PB5-1] Fabrication and evaluation of Ag8SnS6 photoelectrode by fine particle coating technique

〇(M1)GIAPHUC LENGUYEN1, Kunihiko Tanaka1 (1.Nagaoka Univ. of Tech.)

Keywords:Ag8SnS6, fine particle coating technique, photoelectrode

Currently, various semiconductor photocatalysts are being studied to prepare photoelectrodes. However, due to its wide energy band gap, many of them are not effective against visible light. Among them, Ag8SnS6 have a band gap of about 1.1 - 1.6 eV that can effectively utilize visible light. Sputtering method and chemical solution deposition method have been reported as a method of growing Ag8SnS6. Still, the sputtering method is expensive, while the chemical solution deposition method is inexpensive, but the quality of its product isn't so good. In this study, Ag8SnS6 thin film are grown by fine particle coating method which can be cheaper than sputtering method and can deposit more high quality thin films than chemical solution deposition method.