[19p-146-1~22] 15.4 III-V-group nitride crystals

[19p-146-16] Size-dependent optical characterization of InGaN/GaN multi quantum well based nanopillars fabricated by Hydrogen Environment Anisotropic Thermal Etching (HEATE)

〇Yusuke Namae¹, Daichi Ito¹, Yusei Kawasaki¹, Yuki Ohe¹, Akihiro Matsuoka¹, Yuta Moriya¹, Akihiko Kikuchi^1,2 (1.Sophia Univ., 2.Sophia Nanotechnology Research Center)

Keywords:nanostructure, Nitride, Gallium Nitride

InGaN / GaN quantum well based nanostructure is an attractive material that improves light emission characteristics by strain relaxation effect, threading dislocation-isolation effect, light extraction efficiency, and the like. We have studied hydrogen anisotropic thermal etching (HEATE) method which can perform low damage nanofabrication by thermal decomposition of GaN in hydrogen atmosphere and investigated etching characteristics of GaN and InGaN / GaN nanostructure LED production and so on. In this study, we report the InGaN disk diameter dependence of photoluminescence (PL) emission characteristics of InGaN / GaN nanopillar arrays fabricated at the range of InGaN disk diameter from 38 to 2020 nm by HEATE.