The 79th JSAP Autumn Meeting, 2018

Presentation information

Oral presentation

12 Organic Molecules and Bioelectronics » 12.1 Fabrications and Structure Controls

[19p-231C-1~19] 12.1 Fabrications and Structure Controls

Wed. Sep 19, 2018 1:15 PM - 6:15 PM 231C (3F_Lounge1)

Daiki Kuzuhara(Iwate Univ.), Nobuya Hiroshiba(Waseda Univ.)

3:45 PM - 4:00 PM

[19p-231C-10] Deposition Temperature Dependence on Pentacene-based Pseudo-CMOS utilizing Threshold Voltage Control by N-doped LaB6 Interfacial Layer

〇(D)Yasutaka Maeda1, Kyung Eun Park1, Yuki Komatsu1, Shun-ichiro Ohmi1 (1.Tokyo Tech)

Keywords:pentacene, nitrogen-doped LaB6, interfacial layer

Pentacene-based pseudo-CMOS utilizing threshold voltage (VTH) control by nitrogen-doped LaB6 interfacial layer (IL) was reported. In this paper, the deposition temperature dependence for pentacene film was investigated to improve the VTH difference between OFETs in the pseudo-CMOS. The deposition temperature at 100oC for pentacene film increased VTH difference and improved the inverter characteristics. Further scaling of device size would suppress the leakage current and improve the inverter characteristics.