[19p-CE-1~4] JSAP-KPS Joint Symposium: Wide Bandgap Semiconductor Devices

▲ [19p-CE-4] Recessed-gate AlGaN/GaN High Electron Mobility Transistors (HEMTs) Prepared by Photo-electrochemical Etching and Post-metallization Annealing

〇Keisuke Uemura¹, Manato Deki², Yoshio Honda², Hiroshi Amano², Taketomo Sato¹ (1.RCIQE, Hokkaido Univ., 2.IMaSS, Nagoya Univ.)

Keywords:nitride semiconductor, electrochemistry, PMA

Up to the present, the device processing technology has been widely investigated on AlGaN/GaN HEMTs for the improvement of their performance and reliability. In this study, the low-damage photo-electrochemical (PEC) process was optimized for the formation of recessed-gate AlGaN/GaN HEMTs. Furthermore, the effect of the post-metallization-annealing (PMA) process was investigated for the improvement of gate controllability.