Session information

Symposium (Oral)

Symposium » JSAP-KPS Joint Symposium: Wide Bandgap Semiconductor Devices

[19p-CE-1~4] JSAP-KPS Joint Symposium: Wide Bandgap Semiconductor Devices

Wed. Sep 19, 2018 1:00 PM - 2:45 PM CE (Century Hall)

Toshiharu Kubo(Nagoya Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:30 PM

▲ [19p-CE-1] Enhanced Light Extraction from AlGaN Deep-Ultraviolet Light-Emitting Diodes

〇Jong Kyu Kim¹, Jong Won Lee¹ (1.Pohang Univ. of Science and Technology)

1:30 PM - 2:00 PM

▲ [19p-CE-2] Crystal plane dependence of interface states density in c- and m-plane GaN MOS capacitors

〇Manato Deki¹, Yuto Ando², Hirotaka Watanabe¹, Atsushi Tanaka^1,3, Maki Kushimoto², Shugo Nitta¹, Yoshio Honda¹, Hiroshi Amano^1,4,5 (1.IMaSS Nagoya Univ., 2.Nagoya Univ., 3.NIMS, 4.ARC, 5.Nagoya Univ. VBL)

2:00 PM - 2:30 PM

▲ [19p-CE-3] Classical and Quantum Light Generation from GaN-based Semiconductor Nanostructures

〇Yong-Hoon Cho¹ (1.Korea Advanced Institute of Science and Technology (KAIST))

2:30 PM - 2:45 PM

▲ [19p-CE-4] Recessed-gate AlGaN/GaN High Electron Mobility Transistors (HEMTs) Prepared by Photo-electrochemical Etching and Post-metallization Annealing

〇Keisuke Uemura¹, Manato Deki², Yoshio Honda², Hiroshi Amano², Taketomo Sato¹ (1.RCIQE, Hokkaido Univ., 2.IMaSS, Nagoya Univ.)

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