[19p-CE-5~17] 13.7 Compound and power electron devices and process technology

[19p-CE-5] [JSAP Paper Award Speech] Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

〇Hajime Fujikura¹, Taichiro Konno¹, Takehiro Yoshida¹, Fumimasa Horikiri¹ (1.SCIOCS)

Keywords:JSAP Paper Award