[19p-CE-5~17] 13.7 Compound and power electron devices and process technology

[19p-CE-6] Advanced photo-assisted capacitance characterization of deep traps at insulator/wide-bandgap semiconductor interface

〇Atsushi Hiraiwa^1,4, Satoshi Okubo², Kiyotaka Horikawa², Hiroshi Kawarada^2,3 (1.RONLI, Waseda Univ., 2.Fac. Sci. Eng., Waseda Univ., 3.KMLMST, Waseda Univ., 4.IMaSS, Nagoya Univ.)

Keywords:wide-bandgap, deep trap, capacitance-voltage measurement

Deep traps at insulator/wide-bandgap semiconductor interface are difficult to detect by using the conventional capacitance-voltage (C-V) method. The photo-assisted C-V method is a solution to this challenge, but still lacks in the accuracy of obtained results. Based on the physical understanding of the photo-assistance process, this study solves this problem by optimizing the condition for light illumination and the scan range of C-V measurements. The obtained results on shallow traps, to which the Terman method is limited, are consistent with those by the latter. A guideline for accurate measurements will also be proposed.