The 79th JSAP Autumn Meeting, 2018

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[20a-141-1~13] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Sep 20, 2018 9:00 AM - 12:30 PM 141 (141+142)

Katsuhiro Kutsuki(Toyota Central R&D Labs.)

10:00 AM - 10:15 AM

△ [20a-141-5] Improvement of interface properties of Al2O3/SiC by post oxygen radical treatment

〇Takuma Doi1,2, Wakana Takeuchi3, Mitsuo Sakashita1, Shigehisa Shibayama1, Noriyuki Taoka2, Osamu Nakatsuka1,4, Shigeaki Zaima5 (1.Nagoya Univ., 2.AIST-NU GaN-OIL, 3.AIT, 4.IMaSS, Nagoya Univ., 5.IIFS, Nagoya Univ.)

Keywords:SiC, Oxygen radical