Estimation of interface state density in heavily-doped SiC MOS structures from gate characteristics of MOSFETs

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Thu. Sep 20, 2018 9:00 AM - 12:30 PM 141 (141+142)

Katsuhiro Kutsuki(Toyota Central R&D Labs.)

10:15 AM - 10:30 AM

〇Koji Ito¹, Takuma Kobayashi¹, Masahiro Horita¹, Jun Suda¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:MOS