[20a-233-1~9] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[20a-233-4] Electrical Properties of LTPS Thin Films after Excimer Laser Doping with H3PO4 Thin Films

〇Kaname Imokawa^1,2, Nozomu Tanaka¹, Akira Suwa^1,2, Daisuke Nakamura¹, Taizoh Sadoh¹, Tetsuya Goto³, Hiroshi Ikenoue^1,2 (1.Kyushu Univ., 2.Department of Gigaphoton Next GLP, Kyushu Univ., 3.Tohoku Univ.)

Keywords:Excimer laser, Doping, LTPS

Low-temperature poly-Si (LTPS) is used as a channel material in thin-film transistors (TFTs), which are widely used as switching devices in flat panel displays such as liquid-crystal displays. LTPS can be used not only for switching devices, but also for integration of peripheral circuits on glass substrates owing to its higher mobility (10-100 times) than that of a-Si. LTPS is formed by excimer-laser annealing (ELA); it is expected that ELA can be applied for flexible display manufacturing owing to the low-temperature process. On the other hand, a high-temperature process (~500 °C), such as ion implantation, is necessary for a low contact resistivity in the source/drain contact; therefore, this process mismatches the roll-to-roll process. In previous study, we proposed a new method coating the surface of poly-Si with a phosphoric-acid solution. In this study, we report electrical properties of LTPS thin films after excimer laser doping with coated H3PO4 films.